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Journal: Appl. Sci., 2020
Volume: 10
Number: 4977

Article: Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation
Authors: by Kitae Lee, Sihyun Kim, Daewoong Kwon and Byung-Gook Park
Link: https://www.mdpi.com/2076-3417/10/14/4977

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