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Article
Peer-Review Record

Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED

Appl. Sci. 2020, 10(4), 1514; https://doi.org/10.3390/app10041514
by Dohyun Kim 1,†, Keun Man Song 2,†, UiJin Jung 1, Subin Kim 1, Dong Su Shin 1 and Jinsub Park 1,3,*
Reviewer 1: Anonymous
Reviewer 2: Anonymous
Appl. Sci. 2020, 10(4), 1514; https://doi.org/10.3390/app10041514
Submission received: 18 January 2020 / Revised: 16 February 2020 / Accepted: 19 February 2020 / Published: 23 February 2020
(This article belongs to the Special Issue GaN-Based Light-Emitting Diodes)

Round 1

Reviewer 1 Report

The manuscript reports on timely investigation of optoelectronic properties of InGaN/GaN structures prepared by various procedures. Presented results clearly demonstrate the improvement of the structure performance optimized as the sample No.3. The manuscript should be published in Applied Sciences after authors consider or amend few items listed below.

1. The investigated device shows pretty complex arrangement. I suggest authors to show the profile of band structure along the growth axis of their sample. Considered optical transitions might be sketched as well. I would help readers to better understand the topic.

2. The dimension units of micro-meters should be labeled correctly, not as um used for example in line 122.

3. Some typing or grammar faults were noticed, see for example in line 91: 'an n-type' and in line 210: 'a laser'. Fig. 4(a) 'PL Intensity'

Author Response

Please see the attachment

Author Response File: Author Response.docx

Reviewer 2 Report

Please see the attached file.

Comments for author File: Comments.docx

Author Response

Please see the attachment.

Author Response File: Author Response.docx

Round 2

Reviewer 2 Report

The authors have addressed all the issues raised in my previous review in the revised manuscript. I am happy with the revision and the paper may be accepted for publication. 

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