Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling
Round 1
Reviewer 1 Report
1. Please instruct which practical application uses the TMOSFETs?
2. Please compare the characteristics of the GaN, SiC, and MOSFET.
3. Please explain in detail why the model can predict the switching characteristics of the effect BPW regions.
Author Response
Thank the reviewers and editors for their time and comments. We would like to take this opportunity to express to our thanks to the reviewers for the positive feedback and helpful comments.
We uploaded the review report, and we are looking forward to your response.
Author Response File: 
Author Response.pdf
Reviewer 2 Report
This manuscript introduces an analytical model for the design of high-power trench-gate MOSFET. The analytical model is more informative and insightful for device design and optimization; thus, the referee recommends this paper be published in Applied Science. A few minor revisions may help enhance the overall quality of this paper and make it more reader-friendly.
First, the authors should label all key parameters of modeling in Fig. 1 to help the readers quickly obtain this information. Otherwise, this figure may just illustrate the trenched-gate MOSFET structure that is well-established, as such, become less informative.
Second, the modeling parameters are delivered by a Monte Carlo simulation. But it is still questionable that whether this simulate represents the actual cases unless more discussion or experimental data (from references) can be included.
Also, the authors only compared the Cgd obtained by analytical and numerical simulation. But what about their predictions on electrical field crowding, which is the primary reason for the dielectric breakdown.
Author Response
Thank the reviewers and editors for their time and comments. We would like to take this opportunity to express to our thanks to the reviewers for the positive feedback and helpful comments.
We uploaded the review report, and we are looking forward to your response.
Author Response File: Author Response.pdf
