Fast Method of Computations of Ripples in the Junction Temperature of Discrete Power SiC-MOSFETs at the Steady State
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Górecki, K.; Górecki, P. Fast Method of Computations of Ripples in the Junction Temperature of Discrete Power SiC-MOSFETs at the Steady State. Appl. Sci. 2022, 12, 8887. https://doi.org/10.3390/app12178887
Górecki K, Górecki P. Fast Method of Computations of Ripples in the Junction Temperature of Discrete Power SiC-MOSFETs at the Steady State. Applied Sciences. 2022; 12(17):8887. https://doi.org/10.3390/app12178887
Chicago/Turabian StyleGórecki, Krzysztof, and Paweł Górecki. 2022. "Fast Method of Computations of Ripples in the Junction Temperature of Discrete Power SiC-MOSFETs at the Steady State" Applied Sciences 12, no. 17: 8887. https://doi.org/10.3390/app12178887
APA StyleGórecki, K., & Górecki, P. (2022). Fast Method of Computations of Ripples in the Junction Temperature of Discrete Power SiC-MOSFETs at the Steady State. Applied Sciences, 12(17), 8887. https://doi.org/10.3390/app12178887