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Journal: Appl. Sci., 2022
Volume: 12
Number: 1757
Article:
Enhancement-Mode Heterojunction Vertical β-Ga2O3 MOSFET with a P-Type Oxide Current-Blocking Layer
Authors:
by
Yuwen Huang, Xiaoping Xie, Zeyulin Zhang, Peng Dong, Zhe Li, Dazheng Chen, Weidong Zhu, Shenglei Zhao, Qian Feng, Jincheng Zhang, Chunfu Zhang and Yue Hao
Link:
https://www.mdpi.com/2076-3417/12/3/1757
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