Analysis of Ruggedness of 4H-SiC Power MOSFETs with Various Doping Parameters

Round 1

Reviewer 1 Report

A few remarks about this study:

- it is a simulation-based work, so you should not be talking about "test" which could be confused with experimental work

- please rephrase and extend the conclusions, it is hard to understand what the contribution is and the English is a bit unclear in some sentences

- a general spell check is required

 

Author Response

We appreciate for your kind comments and suggestions helping us improve the manuscript. We revised the manuscript thoughtfully and prepared answer list on your review reports in Word file.

Author Response File: Author Response.docx

Reviewer 2 Report

Ho-Jun Lee et al. discussed the effect of doping concentration on avalanche mode performance in SiC-based MOSFET. Based on the main conclusion, the robustness of the device under abnormal operating conditions can be improved. Overall, the results are significant and shed light on the evaluation of device failure process, but the presentation quality of figures as shown in the context is not that ideal. The font size in the figures is so small that I read it very dificultly. I hope this issue can be improved before the manuscript is accepted.

 

Author Response

We appreciate for your kind comments and suggestions helping us improve the manuscript. We revised the manuscript thoughtfully and prepared answer list on your review reports in Word file.

Author Response File: Author Response.docx