POSS and PAG Dual-Containing Chemically Amplified Photoresists by RAFT Polymerization for Enhanced Thermal Performance and Acid Diffusion Inhibition
Abstract
:1. Introduction
2. Experimental Section/Methods
2.1. Materials
2.2. Synthesis of Photoacid Generators TPS-SS
2.3. Synthesis of POSS-MA
2.4. Synthesis of the Copolymer PTBM by RAFT Polymerization
2.5. Photoresist Formulation and Exposure Testing
2.6. Characterization
3. Results and Discussion
3.1. RAFT Polymerization Kinetics
3.2. RAFT Agent Removal
3.3. 1H NMR, FT-IR and UV-Vis Analysis of Polymers
3.4. Thermal Properties of Polymers
3.5. Exposure Testing of Photoresist Copolymer
3.5.1. FT-IR Analysis before and after Exposure
3.5.2. Lithographic Evaluation
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Entry | [POSS-MA]:[TPS-SS]:[tBMA]:[MMA]:[CDSPA]:[AIBN] (a), (b) | Time (h) | A (c) (%) | Mn,GPC (kg·mol−1) (d) | Mn,th (kg·mol−1) (e) | Mw/Mn (d) |
---|---|---|---|---|---|---|
PTBM-0 | 0:8:200:100:1:0.5 | 20 | 85.5 | 24.0 | 35.9 | 1.29 |
PTBM-1 | 2:8:200:100:1:0.5 | 20 | 81.3 | 24.4 | 35.7 | 1.28 |
PTBM-2 | 4:8:200:100:1:0.5 | 20 | 75.6 | 24.9 | 34.6 | 1.25 |
PTBM-3 | 6:8:200:100:1:0.5 | 20 | 70.2 | 25.1 | 33.4 | 1.27 |
PTBM-4 | 8:8:200:100:1:0.5 | 20 | 64.0 | 25.5 | 31.7 | 1.26 |
PBM | 8:0:200:100:1:0.5 | 20 | 73.7 | 25.0 | 33.5 | 1.23 |
N (%) | C (%) | H (%) | S (%) | |
---|---|---|---|---|
PTBM-4 | 0.23 | 66.22 | 8.667 | 1.749 |
PTBM-4 without RAFT terminal group | 0.18 | 64.90 | 8.624 | 1.324 |
Entry | Feed Ratio (mol%) | Copolymer Compositions (a) (mol%) | ||||||
---|---|---|---|---|---|---|---|---|
[POSS-MA] | [TPS-SS] | [tBMA] | [MMA] | [POSS-MA] | [TPS-SS] | [tBMA] | [MMA] | |
PTBM-0 | 0 | 2.6 | 64.9 | 32.5 | 0 | 2.8 | 61.1 | 36.1 |
PTBM-1 | 0.6 | 2.6 | 64.5 | 32.3 | 0.7 | 2.9 | 61.0 | 35.4 |
PTBM-2 | 1.3 | 2.6 | 64.1 | 32.0 | 1.3 | 2.9 | 61.1 | 34.7 |
PTBM-3 | 1.9 | 2.6 | 63.7 | 31.8 | 2.0 | 2.7 | 60.4 | 34.9 |
PTBM-4 | 2.6 | 2.6 | 63.3 | 31.5 | 2.8 | 2.6 | 64.4 | 30.2 |
PBM | 2.6 | 0 | 64.9 | 32.5 | 2.7 | 0 | 63.9 | 33.4 |
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Yu, H.; Liu, S.; Fu, H.; Cui, Z.; Zhang, L.; Tian, J. POSS and PAG Dual-Containing Chemically Amplified Photoresists by RAFT Polymerization for Enhanced Thermal Performance and Acid Diffusion Inhibition. Appl. Sci. 2024, 14, 7722. https://doi.org/10.3390/app14177722
Yu H, Liu S, Fu H, Cui Z, Zhang L, Tian J. POSS and PAG Dual-Containing Chemically Amplified Photoresists by RAFT Polymerization for Enhanced Thermal Performance and Acid Diffusion Inhibition. Applied Sciences. 2024; 14(17):7722. https://doi.org/10.3390/app14177722
Chicago/Turabian StyleYu, Haimeng, Shaoshuai Liu, Haiyan Fu, Zepeng Cui, Liangshun Zhang, and Jia Tian. 2024. "POSS and PAG Dual-Containing Chemically Amplified Photoresists by RAFT Polymerization for Enhanced Thermal Performance and Acid Diffusion Inhibition" Applied Sciences 14, no. 17: 7722. https://doi.org/10.3390/app14177722