Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
Round 1
Reviewer 1 Report
This manuscript describes polystyrene/graphene oxide bilayer dielectrics for pentacene OFETs. I find it well written and can recommend it for publication after the authors provide some minor clarifications on the text.
My comments:
1. How many devices/samples are measured for each of the experiments? There is no error bar in the plots. This question is related to the reproducibility of the method.
2. How uniform is the GO coating?
3. The on/off ratio of the OFET is on the lower end. Although the authors claim in the Introduction part that PS is supposed to reduce the traps on the GO surface and therefore reduce hysteresis, no such data was shown in the manuscript.
4. Somewhat related to comment 3, if PS improves the surface of GO, the mobility of pentacene should indeed be enhanced on PS/GO dielectrics, compared to pentacene on GO. No such comparison, however, was presented in the manuscript. And again, in reporting such numbers as mobility, C and Ion/off, multiple devices should be studied.
5. When the authors report improved ordering of pentacene on PS and PS/GO surfaces, some data on pentacene surface morphology, for example, AFM images of pentacene on GO, PS, and PS/GO surfaces, might be useful supplements to the XRD.
Author Response
We would like to thank the reviewer for these encouraging comments. In our revised manuscript we have tried to fully address the reviewer’s suggestions and concerns. Please see the attached file.
Author Response File: 
Author Response.pdf
Reviewer 2 Report
The authors describe the bi-layer of graphene oxide and PS as a gate dielectric.
Development of a high-performance gate insulating film that can be formed by a solution method is very important.
But for acceptance, some explanation needs to be added.
Comment 1:
Some documents state that the crystalline state of pentacene correlates with the surface energy of the insulating film surface.
Is there a correlation between the surface energy values of GO and GO / PS and the values of XRD and GIXD?
Comment 2:
The AFM images are shown in Figure 2.
However, there is no scale showing height information.
Comment 3:
Is the GO solution and PS solution spin-coated in the air?
Comment 4:
Figure 6 shows the characteristics of the pentacene transistor.
Why is the off current very high? (Low On / Off Ratio) Is there a comment?
There is no hysteresis in transistor characteristics. Is this characteristic dual sweeping?
Comment 5:
As the characteristics of the organic transistor, the following characteristics are considered to be important.
1. mobility
2. Vth
3. on/off ratio
4. hysteresis
5. gate leakage current
Comment 6:
The authors explain in the abstract that the trap is improved in the PS layer.
It is necessary to explain more in the main text.
Author Response
We would like to thank the reviewer’s invaluable comments. In our revised manuscript we have tried to fully address the reviewer’s suggestions and concerns. Please see the attached file.
Author Response File: Author Response.pdf
Reviewer 3 Report
The paper “Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors” describes the use of graphene oxide coated with polystyrene as gate dielectric for organic FET devices. The authors demonstrate a functional device that can operate within a low voltage regime.
The paper is clearly written and follows a logical flow, with conclusions well supported by experimental results. I thus recommend publication on Applied Sciences, with only a few minor corrections as listed below.
Fig. 1a should include a few more information about the Hummers’ process for those who are not familiar with it, compatibly with space and clarity of the figure
On line 114, I assume that M-I-M stands for Metal-Insulator-Metal, which I think it is better to make explicit in the interest of clarity for the reader
Fig. 6b should have a legend to improve clarity of the figure
Author Response
We are very grateful to your favorable and thoughtful comments. In our revised manuscript we have tried to fully address the reviewer’s suggestions and concerns. Please see the attached file.
Author Response File: Author Response.pdf
