Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures
Abstract
:1. Introduction
2. Experiments
3. Experimental Results
- (1)
- The intermixing of materials, that leads to a high-energy shift of the PL band due to the QD atom diffusion into the AlAs matrix during high-temperature annealing, depends strongly on the level and type of doping.
- (2)
- For (In,Al)As quantum dots forming in the AlAs cationic sublattice, this blue-shift under the same annealing conditions is the smallest in the p-doped heterostructure, increases in the undoped one, and becomes the largest in the n-doped heterostructure.
- (3)
- The Al(Sb,As)/AlAs quantum dots forming in the AlAs anionic sublattice demonstrate the directly opposite behavior: the smallest blue-shift occurs for the n-doped heterostructure and the largest one for the p-doped heterostructure.
4. Discussion
4.1. Vacancy Formation Dynamics
4.2. Spatial Distribution of Vacancy Generation Rate in Heterostructures
4.3. Band Diagrams of Heterostructures with QDs and Carrier Distribution
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
Appendix A
Appendix B
References
- Kalt, H.; Hetterich, M. (Eds.) Optics of Semiconductors and Their Nanostructures; Springer: Berlin, Germany, 2004. [Google Scholar]
- Ivchenko, E.L.; Pikus, G.E. Superlattices and Other Heterostructures; Springer Series in Solid-State Sciences; Springer: Berlin, Germany, 1997; Volume 110. [Google Scholar]
- Abramkin, D.S.; Atuchin, V.V. Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories. Nanomaterials 2022, 12, 3794. [Google Scholar] [CrossRef]
- Smirnov, D.S.; Shamirzaev, T.S.; Yakovlev, D.R.; Bayer, M. Dynamic Polarization of Electron Spins Interacting with Nuclei in Semiconductor Nanostructures. Phys. Rev. Lett. 2020, 125, 156801. [Google Scholar] [CrossRef]
- Shamirzaev, T.S.; Shumilin, A.V.; Smirnov, D.S.; Rautert, J.; Yakovlev, D.R.; Bayer, M. Dynamic polarization of electron spins in indirect band gap (In,Al)As/AlAs quantum dots in a weak magnetic field: Experiment and theory. Phys. Rev. B 2021, 104, 115405. [Google Scholar] [CrossRef]
- Abramkin, D.S.; Petrushkov, M.O.; Bogomolov, D.B.; Emelyanov, E.A.; Yesin, M.Y.; Vasev, A.V.; Bloshkin, A.A.; Koptev, E.S.; Putyato, M.A.; Atuchin, V.V.; et al. Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots. Nanomaterials 2023, 13, 910. [Google Scholar] [CrossRef]
- Zhou, Y.; Luo, X.; Yang, J.; Qiu, Q.; Xie, T.; Liang, T. Application of Quantum Dot Interface Modification Layer in Perovskite Solar Cells: Progress and Perspectives. Nanomaterials 2022, 12, 2102. [Google Scholar] [CrossRef] [PubMed]
- Smponias, A.; Stefanatos, D.; Paspalakis, E. Efficient Biexciton Preparation in a Quantum Dot—Metal Nanoparticle System Using On-Off Pulses. Nanomaterials 2021, 11, 1859. [Google Scholar] [CrossRef]
- Petrushkov, M.O.; Abramkin, D.S.; Emelyanov, E.A.; Putyato, M.A.; Komkov, O.S.; Firsov, D.D.; Vasev, A.V.; Yesin, M.Y.; Bakarov, A.K.; Loshkarev, I.D.; et al. Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. Nanomaterials 2022, 12, 4449. [Google Scholar] [CrossRef] [PubMed]
- Kuznetsova, M.S.; Rautert, J.; Kavokin, K.V.; Smirnov, D.S.; Yakovlev, D.R.; Bakarov, A.K.; Gutakovskii, A.K.; Shamirzaev, T.S.; Bayer, M. Electron-nuclei interaction in the X valley of (In,Al)As/AlAs quantum dots. Phys. Rev. B 2020, 101, 075412. [Google Scholar] [CrossRef]
- Shamirzaev, T.S.; Rautert, J.; Yakovlev, D.R.; Debus, J.; Gornov, A.Y.; Glazov, M.M.; Ivchenko, E.L.; Bayer, M. Spin dynamics and magnetic field induced polarization of excitons in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment. Phys. Rev. B 2017, 96, 035302. [Google Scholar] [CrossRef] [Green Version]
- Taylor, M.W.; Spencer, P.; Murray, R. Negative circular polarization as a universal property of quantum dots. Appl. Phys. Lett. 2015, 106, 122404. [Google Scholar] [CrossRef]
- Debus, J.; Shamirzaev, T.S.; Dunker, D.; Sapega, V.F.; Ivchenko, E.L.; Yakovlev, D.R.; Toropov, A.I.; Bayer, M. Spin-flip Raman scattering of the Γ-X mixed exciton in indirect band gap (In,Al)As/AlAs quantum dots. Phys. Rev. B 2014, 90, 125431. [Google Scholar] [CrossRef] [Green Version]
- Li, E.H. Semiconductor Quantum Wells Intermixing; Gordon and Breach: Amsterdam, The Netherlands, 2000. [Google Scholar]
- Gupta, D. (Ed.) Diffusion Processes in Advanced Technological Materials; Springer: New York, NY, USA, 2005. [Google Scholar]
- Shamirzaev, T.S.; Atuchin, V.V.; Zhilitskiy, V.E.; Gornov, A.Y. Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons. Nanomaterials 2023, 13, 308. [Google Scholar] [CrossRef]
- Shamirzaev, T.S.; Debus, J.; Abramkin, D.S.; Dunker, D.; Yakovlev, D.R.; Dmitriev, D.V.; Gutakovskii, A.K.; Braginsky, L.S.; Zhuravlev, K.S.; Bayer, M. Exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap and type-I band alignment. Phys. Rev. B 2011, 84, 155318. [Google Scholar] [CrossRef] [Green Version]
- Sinha, S.S.K.; Kumar, S.; Das, M.K. Dot size variability induced changes in the optical absorption spectra of interdiffused quantum dot systems. Appl. Phys. A 2019, 125, 774. [Google Scholar] [CrossRef]
- Petrov, M.Y.; Ignatiev, I.; Poltavtsev, S.; Greilich, A.; Bauschulte, A.; Yakovlev, D.; Bayer, M. Effect of thermal annealing on the hyperfine interaction in InAs/GaAs quantum dots. Phys. Rev. B 2008, 78, 045315. [Google Scholar] [CrossRef] [Green Version]
- Ivanov, V.Y.; Shamirzaev, T.S.; Yakovlev, D.R.; Gutakovskii, A.K.; Owczarczyk, Ł.; Bayer, M. Optically detected magnetic resonance of photoexcited electrons in (In,Al)As/AlAs quantum dots with indirect band gap and type-I band alignment. Phys. Rev. B 2018, 97, 245306. [Google Scholar] [CrossRef]
- Tartakovskii, A.I.; Makhonin, M.N.; Sellers, I.R.; Cahill, J.; Andreev, A.D.; Whittaker, D.M.; Wells, J.-P.R.; Fox, A.M.; Mowbray, D.J.; Skolnick, M.S.; et al. Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons. Phys. Rev. B 2004, 70, 193303. [Google Scholar] [CrossRef] [Green Version]
- Shamirzaev, T.S.; Kalagin, A.K.; Toropov, A.I.; Gutakovskii, A.K.; Zhuravlev, K.S. Narrowing of ground energy level distribution in an array of InAs/AlAs QDs by post grown annealing. Phys. Status Solidi C 2006, 3, 3932–3934. [Google Scholar] [CrossRef]
- Seebauer, E.G.; Kratzer, M.C. Charged point defects in semiconductors. Mater. Sci. Eng. R Rep. 2006, 55, 57–149. [Google Scholar] [CrossRef]
- Tahini, H.A.; Chroneos, A.; Murphy, S.; Schwingenschlogl, U.; Grimes, R.W. Vacancies and defect levels in III–V semiconductors. J. Appl. Phys. 2013, 114, 063517. [Google Scholar] [CrossRef] [Green Version]
- Walukiewicz, W. Amphoteric native defects in semiconductors. Appl. Phys. Lett. 1989, 54, 2094–2096. [Google Scholar] [CrossRef] [Green Version]
- Zhang, S.B.; Northrup, J.E. Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion. Phys. Rev. Lett. 1991, 67, 2339–2342. [Google Scholar] [CrossRef] [PubMed]
- Vinetskii, V.L.; Kholodar, G.A. The Statistical Interaction of Electrons and Defects in Semiconductors; NaukovaDumka: Kiev, Ukraine, 1969. (In Russian) [Google Scholar]
- Freysoldt, C.; Grabowski, B.; Hickel, T.; Neugebauer, J.; Kresse, G.; Janotti, A.; Van de Walle, C.G. First-principles calculations for point defects in solids. Rev. Mod. Phys. 2014, 86, 253–305. [Google Scholar] [CrossRef]
- Baraff, G.A.; Schliiter, M. Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAs. Phys.Rev. Lett. 1985, 55, 1327. [Google Scholar] [CrossRef]
- Crawford, J.H., Jr.; Slifkin, L.M. (Eds.) Point defects in solids. In Semiconductors and Molecular Crystals; Plenum Press: New York, NY, USA, 1975; Volume 2. [Google Scholar]
- Drabold, D.A.; Estreicher, S.K. (Eds.) Theory of Defects in Semiconductors; Springer: Berlin/Heidelberg, Germany, 2007. [Google Scholar]
- Shamirzaev, T.S.; Nenashev, A.V.; Gutakovskii, A.K.; Kalagin, A.K.; Zhuravlev, K.S.; Larsson, M.; Holtz, P.O. AtomicandenergystructureofInAs/AlAsquantumdots. Phys. Rev. B 2008, 78, 085323. [Google Scholar] [CrossRef]
- Abramkin, D.S.; Rumynin, K.M.; Bakarov, A.K.; Kolotovkina, D.A.; Gutakovskii, A.K.; Shamirzaev, T.S. Quantum dotsformed in InSb/AlAsandAlSb/AlAsheterostructures. JETP Lett. 2016, 103, 692. [Google Scholar] [CrossRef]
- Shamirzaev, T.S.; Yakovlev, D.R.; Kopteva, N.E.; Kudlacik, D.; Glazov, M.M.; Krechetov, A.G.; Gutakovskii, A.K.; Bayer, M. Spin dynamics of charged excitons in ultrathin (In,Al)(Sb,As)/AlAs and Al(Sb,As)/AlAs quantum wells with an indirect band gap. Phys. Rev. B 2022, 106, 075407. [Google Scholar] [CrossRef]
- Shamirzaev, T.S.; Yakovlev, D.R.; Bakarov, A.K.; Kopteva, N.E.; Kudlacik, D.; Gutakovskii, A.K.; Bayer, M. Recombinationandspindynamicsofexcitons in thin (Ga,Al)(Sb,As)/AlAsquantumwellswith an indirect band gapand type-I band alignment. Phys. Rev. B 2020, 102, 165423. [Google Scholar] [CrossRef]
- Shamirzaev, T.S.; Abramkin, D.S.; Dmitriev, D.V.; Gutakovskii, A.K. Nonradiative energy transfer between vertically coupled indirect and direct bandgap InAs quantum dots. Appl. Phys. Lett. 2010, 97, 263102. [Google Scholar] [CrossRef]
- Shamirzaev, T.S.; Gilinsky, A.M.; Kalagin, A.K.; Toropov, A.I.; Gutakovskii, A.K.; Zhuravlev, K.S. Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects: Evidence for lateral inter-dot transport, Semicond. Sci. Technol. 2006, 21, 527. [Google Scholar] [CrossRef]
- Rautert, J.; Shamirzaev, T.S.; Nekrasov, S.V.; Yakovlev, D.R.; Klenovský, P.; Kusrayev, Y.G.; Bayer, M. Optical orientation and alignment of excitons in direct and indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignment. Phys. Rev. B 2019, 99, 195411. [Google Scholar] [CrossRef] [Green Version]
- Shamirzaev, T.S.; Shumilin, A.V.; Smirnov, D.S.; Kudlacik, D.; Nekrasov, S.V.; Kusrayev, Y.G.; Yakovlev, D.R.; Bayer, M. Optical Orientation of Excitons in a Longitudinal Magnetic Field in Indirect Band Gap (In, Al)As/AlAs Quantum Dots with Type-I Band Alignment. Nanomaterials 2023, 13, 729. [Google Scholar] [CrossRef]
- Shamirzaev, T.S.; Nenashev, A.V.; Zhuravlev, K.S. Coexistence of direct and indirect band structures in arrays of InAs/AlAs quantum dots. Appl. Phys. Lett. 2008, 92, 213101. [Google Scholar] [CrossRef]
- Khreis, O.M.; Gillin, W.P.; Homewood, K.P. Interdiffusion: A probe of vacancy diffusion in III-V materials. Phys. Rev. B 1997, 55, 15813–15818. [Google Scholar] [CrossRef] [Green Version]
- Djie, H.S.; Gunawan, O.; Wang, D.-N.; Ooi, B.S.; Hwang, J.C.M. Group-III vacancy induced InxGa1 − xAs quantum dot interdiffusion. Phys. Rev. B 2006, 73, 155324. [Google Scholar] [CrossRef]
- Wang, Y.; Djie, H.S.; Ooi, B.S. Group-III intermixing in InAs/InGaAlAs quantum dots-in-well. Appl. Phys. Lett. 2006, 88, 111110. [Google Scholar] [CrossRef]
- Alahmadi, Y.; Li Kam Wa, P. Effects of selective area intermixing on InAlGaAs multiple quantum well laser diode. Semicond. Sci. Technol. 2019, 34, 025010. [Google Scholar] [CrossRef]
- Lever, P.; Tan, H.H.; Jagadish, C. Impurity free vacancy disordering of InGaAs quantum dots. J. Appl. Phys. 2004, 96, 7544–7548. [Google Scholar] [CrossRef]
- McKerracher, I.; Fu, L.; Tan, H.H.; Jagadish, C. Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers. J. Appl. Phys. 2012, 112, 113511. [Google Scholar] [CrossRef] [Green Version]
- Rouviere, J.-L.; Kim, Y.; Cunningham, J.; Rentschler, J.A.; Bourret, A.; Ourmazd, A. Measuring properties of point defects by electron microscopy: The Ga vacancy in GaAs. Phys. Rev. Lett. 1992, 68, 2798–2801. [Google Scholar] [CrossRef] [PubMed]
- Hurle, D.T.J. A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide. J. Appl. Phys. 1999, 85, 6957–7022. [Google Scholar] [CrossRef]
- Shamirzaev, T.S.; Sokolov, A.L.; Zhuravlev, K.S.; Kobitski, A.Y.; Wagner, H.P.; Zahn, D.R. Changes in the density of nonradiative recombination centers in GaAs/AlGaAs quantum-well structures as a result of treatment in CF4 plasma. Semiconductors 2002, 36, 81–84. [Google Scholar] [CrossRef]
- Wright, A.F.; Modine, N.A. Migration processes of the As interstitial in GaAs. J. Appl. Phys. 2016, 120, 215705. [Google Scholar] [CrossRef] [Green Version]
- Grundmann, M. The Physics of Semiconductors; Springer: Berlin/Heidelberg, Germany, 2006. [Google Scholar]
- Puska, M.J. Electronic structures of point defects in III-V compound semiconductors. J. Phys. Condens. Matter 1989, 1, 7347–7366. [Google Scholar] [CrossRef]
- El-Mellouhi, F.; Mousseau, N. Self-vacancies in gallium arsenide: An ab initio calculation. Phys. Rev. B 2005, 71, 125207. [Google Scholar] [CrossRef] [Green Version]
- Gebauer, J.; Lausmann, M.; Redmann, F.; Krause-Rehberg, R.; Leipner, H.S.; Weber, E.R.; Ebert, P. Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation. Phys. Rev. B 2003, 67, 235207. [Google Scholar] [CrossRef]
- Mitev, P.; Seshadri, S.; Guido, L.J.; Schaafsma, D.T.; Christensen, D.H. Cation vacancy formation and migration in the AlGaAsheterostructure system. Appl. Phys. Lett. 1998, 73, 3718–3720. [Google Scholar] [CrossRef]
- Lahiri, I.; Nolte, D.D.; Melloch, M.R.; Woodall, J.M.; Walukiewicz, W. Enhanced diffusion in nonstoichiometric quantum wells and the decay of supersaturated vacancy concentrations. Appl. Phys. Lett. 1996, 69, 239–241. [Google Scholar] [CrossRef]
- Bert, N.A.; Chaldyshev, V.V.; Musikhin, Y.G.; Suvorova, A.A.; Preobrazhenskii, V.V.; Putyato, M.A.; Semyagin, B.R.; Werner, P. In–Ga intermixing in low-temperature grown GaAs delta doped with In. Appl. Phys. Lett. 1999, 74, 1442–1444. [Google Scholar] [CrossRef] [Green Version]
- Van Vechten, J.A. Handbook on Semiconductors; Moss, T.S., Ed.; North-Holland: Amsterdam, The Netherlands, 1980; Chapter 1; Volume 3. [Google Scholar]
- Bockstedte, M.; Schefer, M. Theory of Self-Diffusion in GaAs. Z. Phys. Chem. 1997, 200, 195. [Google Scholar] [CrossRef] [Green Version]
- Jia, Y.Q.; Bardeleben, H.J.V.; Stienvard, D.; Delerue, C. Electron-paramagnetic-resonance observation of gallium vacancy in electron-irradiated p-type GaAs. Phys. Rev. B 1992, 45, 1645. [Google Scholar] [CrossRef] [PubMed]
- Kahen, K.B.; Peterson, D.L.; Rajeswaran, G.; Lawrence, D.J. Properties of Ga vacancies in AlGaAs materials. Appl. Phys. Lett. 1989, 55, 651. [Google Scholar] [CrossRef]
- Ullrich, B.; Bhowmick, M.; Xi, H. Relation between Debye temperature and energy band gap of semiconductors. AIP Adv. 2017, 7, 045109. [Google Scholar] [CrossRef] [Green Version]
- Saarinen, K.; Hautojärvi, P.; Lanki, P.; Corbel, C. Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopy. Phys. Rev. B 1991, 44, 10585–10600. [Google Scholar] [CrossRef] [PubMed]
- Pöykkö, S.; Puska, M.J.; Nieminen, R.M. Abinitio study of fully relaxed divacancies in GaAs. Phys. Rev. B 1996, 53, 3813. [Google Scholar] [CrossRef] [Green Version]
- Marsh, J.H. Quantum well intermixing. Semicond. Sci. Technol. 1993, 8, 1136. [Google Scholar] [CrossRef]
- Tuck, B. Mechanisms of atomic diffusion in the III-V semiconductors. J. Phys. D Appl. Phys. 1985, 18, 557–584. [Google Scholar] [CrossRef]
- Zibold, T. Semiconductor Based Quantum Information Devices: Theory and Simulations. Ph.D. Thesis, Technische Universitat München, Munich, Germany, 2007. [Google Scholar]
- Vurgaftman, I.; Meyer, J.R.; Ram-Mohan, L.R. Band parameters for III–V compound semiconductors and their alloys. J. Appl. Phys. 2001, 89, 5815–5875. [Google Scholar] [CrossRef]
- Shamirzaev, T.S. Type-I semiconductor heterostructures with an indirect-gap conduction band. Semiconductors 2011, 45, 96–102. [Google Scholar] [CrossRef]
- Abramkin, D.S.; Shamirzaev, T.S. Type-I indirect-gap semiconductor heterostructures on (110) substrates. Semiconductors 2019, 53, 703–710. [Google Scholar] [CrossRef]
- Shamirzaev, T.S.; Gilinsky, A.M.; Kalagin, A.K.; Nenashev, A.V.; Zhuravlev, K.S. Energy spectrum and structure of thin pseudomorphicInAs quantum wells in an AlAs matrix: Photoluminescence spectra and band-structure calculations. Phys. Rev. B 2007, 76, 155309. [Google Scholar] [CrossRef]
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Shamirzaev, T.S.; Atuchin, V.V. Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures. Nanomaterials 2023, 13, 2136. https://doi.org/10.3390/nano13142136
Shamirzaev TS, Atuchin VV. Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures. Nanomaterials. 2023; 13(14):2136. https://doi.org/10.3390/nano13142136
Chicago/Turabian StyleShamirzaev, Timur S., and Victor V. Atuchin. 2023. "Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures" Nanomaterials 13, no. 14: 2136. https://doi.org/10.3390/nano13142136