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Nanomaterials
Volume 14
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10.3390/nano14131072
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces

by
Grigorii Savchenko
1,*,
Evgeniia Shabunina
1,
Anton Chernyakov
2,
Nadezhda Talnishnikh
2,
Anton Ivanov
2,
Alexandr Abramov
1,
Alexander Zakgeim
2,
Vladimir Kuchinskii
1,3,
Grigorii Sokolovskii
1,
Nikita Averkiev
1 and
Natalia Shmidt
1
1
Ioffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, Russia
2
Submicron Heterostructures for Microelectronics Research and Engineering Center RAS, 26 Politekhnicheskaya, St Petersburg 194021, Russia
3
Department of Electronics, Saint Petersburg Electrotechnical University «LETI», 5, Professora Popova St., St Petersburg 197376, Russia
*
Author to whom correspondence should be addressed.
Nanomaterials 2024, 14(13), 1072; https://doi.org/10.3390/nano14131072
Submission received: 7 May 2024 / Revised: 9 June 2024 / Accepted: 21 June 2024 / Published: 23 June 2024
(This article belongs to the Special Issue Nanophotonics: Lasers, Gratings and Localized Surface Plasmons)
Versions Notes

Abstract

We study recombination processes in nitride LEDs emitting from 270 to 540 nm with EQE ranging from 4% to 70%. We found a significant correlation between the LEDs’ electro-optical properties and the degree of nanomaterial disorder (DND) in quantum wells (QWs) and heterointerfaces. DND depends on the nanoarrangement of domain structure, random alloy fluctuations, and the presence of local regions with disrupted alloy stoichiometry. The decrease in EQE values is attributed to increased DND and excited defect (ED) concentrations, which can exceed those of Shockley–Read–Hall defects. We identify two mechanisms of interaction between EDs and charge carriers that lead to a narrowing or broadening of electroluminescence spectra and increase or decrease EQE, respectively. Both mechanisms involve multiphonon carrier capture and ionization, impacting EQE reduction and efficiency droop. The losses caused by these mechanisms directly affect EQE dependencies on current density and the maximum EQE values for LEDs, regardless of the emission wavelength. Another manifestation of these mechanisms is the reversibility of LED degradation. Recombination processes vary depending on whether QWs are within or outside the space charge region of the p-n junction.
Keywords: external quantum efficiency; efficiency droop; multiphonon recombination; nitrides; LED; random alloy fluctuations; band fluctuation potential external quantum efficiency; efficiency droop; multiphonon recombination; nitrides; LED; random alloy fluctuations; band fluctuation potential

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MDPI and ACS Style

Savchenko, G.; Shabunina, E.; Chernyakov, A.; Talnishnikh, N.; Ivanov, A.; Abramov, A.; Zakgeim, A.; Kuchinskii, V.; Sokolovskii, G.; Averkiev, N.; et al. Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces. Nanomaterials 2024, 14, 1072. https://doi.org/10.3390/nano14131072

AMA Style

Savchenko G, Shabunina E, Chernyakov A, Talnishnikh N, Ivanov A, Abramov A, Zakgeim A, Kuchinskii V, Sokolovskii G, Averkiev N, et al. Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces. Nanomaterials. 2024; 14(13):1072. https://doi.org/10.3390/nano14131072

Chicago/Turabian Style

Savchenko, Grigorii, Evgeniia Shabunina, Anton Chernyakov, Nadezhda Talnishnikh, Anton Ivanov, Alexandr Abramov, Alexander Zakgeim, Vladimir Kuchinskii, Grigorii Sokolovskii, Nikita Averkiev, and et al. 2024. "Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces" Nanomaterials 14, no. 13: 1072. https://doi.org/10.3390/nano14131072

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