Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. Photoluminescence at Room Temperature
3.2. The Simulation of Quantum Well Subband Levels and Analysis of RT-PL
3.3. The X-ray Diffraction Results
3.4. The Temperature-Dependent Photoluminescence Test
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Sample | Peak 1 (nm) | Peak 2 (nm) | e-lh1 (nm) | e-hh1 (nm) | QW Thickness (nm) | QW As Concentration (%) | QB Ga/Al Concentration (%) |
---|---|---|---|---|---|---|---|
A | 740.24 | 721.86 | 740.37 | 720.79 | 6.5 | 73 | 47/47 |
B | 743.3 | 723.39 | 743.24 | 722.42 | 6.9 | 73 | 47/48 |
C | 746.35 | 731.06 | 746.18 | 733.04 | 6.2 | 77 | 48/48 |
D | 749.41 | 738.71 | 749.89 | 738.8 | 6.2 | 78.5 | 48/48 |
Sample | Transition | Eg(0) (eV) | α (eV/K) | β (K) |
---|---|---|---|---|
A | e-lh | 1.769 | 4.955 × 10−4 | 195.396 |
e-hh | 1.814 | 4.011 × 10−4 | 84.572 | |
B | e-lh | 1.765 | 5.643 × 10−4 | 252.426 |
e-hh | 1.824 | 4.846 × 10−4 | 103.768 | |
C | e-lh | 1.738 | 4.688 × 10−4 | 273.293 |
e-hh | 1.757 | 2.672 × 10−4 | 4.728 × 104 | |
D | e-lh | 1.741 | 5.910 × 10−4 | 278.405 |
e-hh | 1.746 | 4.742 × 10−4 | 325.895 |
Sample | C1 | EA1 (meV) | C2 | EA2 (meV) |
---|---|---|---|---|
A | 8.08 × 107 | 363.83 | 18.25 | 40.86 |
B | 1.1 × 107 | 355.74 | 14.83 | 55.39 |
C | 6.95 × 1010 | 565.74 | 15.20 | 46.73 |
D | 2.88 × 105 | 235.82 | 13.15 | 34.21 |
Sample | Γ0 (meV) | σ (meV/K) | γ (meV) | ħωLO (meV) |
---|---|---|---|---|
A | 19.121 | 0.019 | 5.484 | 49.137 |
B | 16.925 | 0.011 | 6.677 | 17.111 |
C | 19.976 | 0.021 | 5.771 | 37.583 |
D | 15.599 | 0.011 | 6.616 | 23.009 |
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Wang, B.; Zeng, Y.; Yu, X.; Gao, W.; Chen, W.; Shen, H.; Qin, L.; Ning, Y.; Wang, L. Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures. Nanomaterials 2024, 14, 1469. https://doi.org/10.3390/nano14181469
Wang B, Zeng Y, Yu X, Gao W, Chen W, Shen H, Qin L, Ning Y, Wang L. Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures. Nanomaterials. 2024; 14(18):1469. https://doi.org/10.3390/nano14181469
Chicago/Turabian StyleWang, Bin, Yugang Zeng, Xuezhe Yu, Weijie Gao, Wei Chen, Haoyu Shen, Li Qin, Yongqiang Ning, and Lijun Wang. 2024. "Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures" Nanomaterials 14, no. 18: 1469. https://doi.org/10.3390/nano14181469