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Journal: Nanomaterials, 2024
Volume: 14
Number: 1471

Article: Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique
Authors: by Chenkai Deng, Peiran Wang, Chuying Tang, Qiaoyu Hu, Fangzhou Du, Yang Jiang, Yi Zhang, Mujun Li, Zilong Xiong, Xiaohui Wang, Kangyao Wen, Wenmao Li, Nick Tao, Qing Wang and Hongyu Yu
Link: https://www.mdpi.com/2079-4991/14/18/1471

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