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Volume 14
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10.3390/nano14070571
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Review

Advances in Semiconductor Lasers Based on Parity–Time Symmetry

by
Hongbo Sha
1,2,
Yue Song
1,2,*,
Yongyi Chen
1,2,3,*,
Jishun Liu
1,2,
Mengjie Shi
1,2,
Zibo Wu
1,2,
Hao Zhang
1,2,
Li Qin
1,2,
Lei Liang
1,2,
Peng Jia
1,2,
Cheng Qiu
1,2,
Yuxin Lei
1,2,
Yubing Wang
1,2,
Yongqiang Ning
1,2,
Guoqing Miao
1,2,
Jinlong Zhang
1,2 and
Lijun Wang
1,2
1
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
2
Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
3
Jlight Semiconductor Technology Co., Ltd., Changchun 130033, China
*
Authors to whom correspondence should be addressed.
Nanomaterials 2024, 14(7), 571; https://doi.org/10.3390/nano14070571
Submission received: 21 February 2024 / Revised: 22 March 2024 / Accepted: 23 March 2024 / Published: 26 March 2024
(This article belongs to the Topic Optical and Optoelectronic Properties of Materials and Their Applications)
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Abstract

Semiconductor lasers, characterized by their high efficiency, small size, low weight, rich wavelength options, and direct electrical drive, have found widespread application in many fields, including military defense, medical aesthetics, industrial processing, and aerospace. The mode characteristics of lasers directly affect their output performance, including output power, beam quality, and spectral linewidth. Therefore, semiconductor lasers with high output power and beam quality are at the forefront of international research in semiconductor laser science. The novel parity–time (PT) symmetry mode-control method provides the ability to selectively modulate longitudinal modes to improve the spectral characteristics of lasers. Recently, it has gathered much attention for transverse modulation, enabling the output of fundamental transverse modes and improving the beam quality of lasers. This study begins with the basic principles of PT symmetry and provides a detailed introduction to the technical solutions and recent developments in single-mode semiconductor lasers based on PT symmetry. We categorize the different modulation methods, analyze their structures, and highlight their performance characteristics. Finally, this paper summarizes the research progress in PT-symmetric lasers and provides prospects for future development.
Keywords: semiconductor lasers; parity–time (PT) symmetry; quantum mechanics; longitudinal modulation in PT-symmetric structures; transverse modulation; distributed-feedback laser; micro-ring/micro-disk lasers; Bragg reflective waveguide lasers; photonic crystal lasers semiconductor lasers; parity–time (PT) symmetry; quantum mechanics; longitudinal modulation in PT-symmetric structures; transverse modulation; distributed-feedback laser; micro-ring/micro-disk lasers; Bragg reflective waveguide lasers; photonic crystal lasers

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MDPI and ACS Style

Sha, H.; Song, Y.; Chen, Y.; Liu, J.; Shi, M.; Wu, Z.; Zhang, H.; Qin, L.; Liang, L.; Jia, P.; et al. Advances in Semiconductor Lasers Based on Parity–Time Symmetry. Nanomaterials 2024, 14, 571. https://doi.org/10.3390/nano14070571

AMA Style

Sha H, Song Y, Chen Y, Liu J, Shi M, Wu Z, Zhang H, Qin L, Liang L, Jia P, et al. Advances in Semiconductor Lasers Based on Parity–Time Symmetry. Nanomaterials. 2024; 14(7):571. https://doi.org/10.3390/nano14070571

Chicago/Turabian Style

Sha, Hongbo, Yue Song, Yongyi Chen, Jishun Liu, Mengjie Shi, Zibo Wu, Hao Zhang, Li Qin, Lei Liang, Peng Jia, and et al. 2024. "Advances in Semiconductor Lasers Based on Parity–Time Symmetry" Nanomaterials 14, no. 7: 571. https://doi.org/10.3390/nano14070571

APA Style

Sha, H., Song, Y., Chen, Y., Liu, J., Shi, M., Wu, Z., Zhang, H., Qin, L., Liang, L., Jia, P., Qiu, C., Lei, Y., Wang, Y., Ning, Y., Miao, G., Zhang, J., & Wang, L. (2024). Advances in Semiconductor Lasers Based on Parity–Time Symmetry. Nanomaterials, 14(7), 571. https://doi.org/10.3390/nano14070571

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