Gao, M.; Yang, J.; Jia, W.; Zhao, D.; Zhai, G.; Dong, H.; Xu, B.
Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes. Nanomaterials 2024, 14, 649.
https://doi.org/10.3390/nano14070649
AMA Style
Gao M, Yang J, Jia W, Zhao D, Zhai G, Dong H, Xu B.
Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes. Nanomaterials. 2024; 14(7):649.
https://doi.org/10.3390/nano14070649
Chicago/Turabian Style
Gao, Maolin, Jing Yang, Wei Jia, Degang Zhao, Guangmei Zhai, Hailiang Dong, and Bingshe Xu.
2024. "Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes" Nanomaterials 14, no. 7: 649.
https://doi.org/10.3390/nano14070649
APA Style
Gao, M., Yang, J., Jia, W., Zhao, D., Zhai, G., Dong, H., & Xu, B.
(2024). Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes. Nanomaterials, 14(7), 649.
https://doi.org/10.3390/nano14070649