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Volume 15
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10.3390/nano15080602
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Article

Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices

by
Yao-Chin Wang
1,
Kai-Huang Chen
2,*,
Ming-Cheng Kao
2,*,
Hsin-Chin Chen
1,
Chien-Min Cheng
3,
Hong-Xiang Huang
1 and
Kai-Chi Huang
3
1
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan
2
Graduate Institute of Aeronautics, Department of Information and Communication Engineering, Chaoyang University of Technology, Taichung 413310, Taiwan
3
Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan
*
Authors to whom correspondence should be addressed.
Nanomaterials 2025, 15(8), 602; https://doi.org/10.3390/nano15080602
Submission received: 19 March 2025 / Revised: 9 April 2025 / Accepted: 11 April 2025 / Published: 14 April 2025
(This article belongs to the Section Synthesis, Interfaces and Nanostructures)
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Abstract

In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared. Solutions were synthesized with a proportional ratio and through the deposition of BST films on titanium nitride/silicon substrates using the sol–gel method, using rapid thermal annealing for defect repair and re-crystallization processing. The crystallization structure and surface morphology of annealed and as-deposited BST films were obtained by XPS, XRD, and SEM measurements. Additionally, the ferroelectric and resistive switching properties for the memory window, the maximum capacitance, and the leakage current were examined for Al/BST/TiN and Cu/BST/TiN structure memory devices. In addition, the first-order reaction equation of the decay reaction behavior for the BST film RRAM devices in the reset state revealed that r=0.19[O2−]1. Finally, the Cu/BST/TiN and Al/BST/TiN structures of the ferroelectric BST films RRAM devices exhibited good memory window properties, bipolar switching properties, and non-volatile properties for applications in non-volatile memory devices.
Keywords: RRAM; BST; bipolar switching properties; thin film; sputtering RRAM; BST; bipolar switching properties; thin film; sputtering

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MDPI and ACS Style

Wang, Y.-C.; Chen, K.-H.; Kao, M.-C.; Chen, H.-C.; Cheng, C.-M.; Huang, H.-X.; Huang, K.-C. Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. Nanomaterials 2025, 15, 602. https://doi.org/10.3390/nano15080602

AMA Style

Wang Y-C, Chen K-H, Kao M-C, Chen H-C, Cheng C-M, Huang H-X, Huang K-C. Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. Nanomaterials. 2025; 15(8):602. https://doi.org/10.3390/nano15080602

Chicago/Turabian Style

Wang, Yao-Chin, Kai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, Chien-Min Cheng, Hong-Xiang Huang, and Kai-Chi Huang. 2025. "Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices" Nanomaterials 15, no. 8: 602. https://doi.org/10.3390/nano15080602

APA Style

Wang, Y.-C., Chen, K.-H., Kao, M.-C., Chen, H.-C., Cheng, C.-M., Huang, H.-X., & Huang, K.-C. (2025). Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. Nanomaterials, 15(8), 602. https://doi.org/10.3390/nano15080602

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