Optoelectronic Properties of Hexagonal Boron Nitride Shielded Molybdenum Diselenide/Black-Phosphorus Based Heterojunction Field Effect Transistor

Round 1

Reviewer 1 Report

This manuscript by Abderrahmane et al. reports on fabrication and electrical characterization of graphene/MoSe2/black phosphorous heterojunction shielded by boron nitride. Experimental results are well explained and they seem to be good results. I have a few suggestions for correction as listed below. Except for that, the manuscript is suited for publication.

 

Comments

1. "BN", "Gr", and "BP" in the title should be spelled out.
2. If there is a discussion in the end, it would benefit readers. 

Author Response

We would like express our sincere appreciation for the reviewer for his comments. They are very valuable and make our manuscript more consistent and readable. Please refer to the attached file where we respond to all reviewers comments and suggestion,

We appreciate your time and consideration in reviewing our manuscript.

Author Response File: Author Response.docx

Reviewer 2 Report

The manuscript entitled “Optoelectronic Properties of Low Power Consumption h-BN shielded Gr/n-MoSe2/p-BP Based Heterojunction Field Effect Transistor (HJFET)” submitted by A. Abderrahmane et al. reported the role of graphene/n-MoSe2/p-BP heterostructures in photodetection. The results seem to be fine for the research field of van der Waals heterojunction devices, thus could be accepted, whereas the manuscript should be logically and grammatically improved before publication. My specific comments are as follows.

1. In the introduction, the authors claimed ‘lower power “consumption”’ and ‘h-BN shielded’ transistor. However, in the manuscript, I found no explanations and discussion on these results and impacts. Therefore, the authors must much more clearly present the significance of the titled characteristics and structures, or reconsider the manuscript title.
2. At line 69 on page 2, the authors mentioned “the current device was annealed at 200ºC for 5 min under nitrogen gas in order to improve contacts quality”. What exactly happens in microscopic view, and what is the significance of the annealing condition?
3. At line 171 on page 5, the authors mentioned “... probably due to the leakage current from the gate contact (MTL Gr)”. This appears to indicate the present results are not capable of universal applications. It would be nice if the authors propose how to solve this issue.
4. Lots of grammatical and typographic errors were stressful for reviewing. I strongly recommend quite careful revision of the English language.

Comments for author File: Comments.docx

Author Response

We would like express our sincere appreciation for the reviewer for his comments. They are very valuable and make our manuscript more consistent and readable. Please refer to the attached file where we respond to all reviewers comments and suggestion,

We appreciate your time and consideration in reviewing our manuscript.

Author Response File: Author Response.docx

Reviewer 3 Report

In this study, the author report the fabrication of novel heterojunction field effect transistor based on two-dimensional Graphene (Gr), molybdenum diselenide (MoSe2) and black-phosphorus (BP), and shielded using hexagonal boron nitride (h-BN) to prevent device degradation.  All the experimental results are new and interesting. In addition, the paper is well organized. Therefore I suggest its publication in this journal. However before acceptance, some minor revisions are needed:

(1) The author should check all the english grammar and some spelling mis

(2) The athour should check all the format of the references.

(3) Some figures are not clear and the author should change.

(4) The author is suggested to offer some HRTEM images to confirm the interface inforamtion.

 

Author Response

We would like express our sincere appreciation for the reviewer for his comments. They are very valuable and make our manuscript more consistent and readable. Please refer to the attached file where we respond to all reviewers comments and suggestion,

We appreciate your time and consideration in reviewing our manuscript.

Author Response File: Author Response.docx