Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures

Kim, Kihyun; Kang, Yehwan; Yun, Seungbok; Yang, Changheon; Jung, Eunsik; Hong, Jeongsoo; Kim, Kyunghwan

doi:10.3390/coatings12060777

Open AccessEditor’s ChoiceArticle

Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures

by

Kihyun Kim

^1,2

,

Yehwan Kang

¹,

Seungbok Yun

¹,

Changheon Yang

¹,

Eunsik Jung

¹,

Jeongsoo Hong

²

and

Kyunghwan Kim

^2,*

¹

SiC R&D Center, YES POWERTECHNIX, 77, Cheongam-ro, Nam-gu, Pohang-si 37673, Korea

²

Department of Electrical Engineering, Gachon University, 1342 Seongnamdaero, Seongnam-si 13120, Korea

^*

Author to whom correspondence should be addressed.

Coatings 2022, 12(6), 777; https://doi.org/10.3390/coatings12060777

Submission received: 9 May 2022 / Revised: 1 June 2022 / Accepted: 1 June 2022 / Published: 4 June 2022

(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)

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Abstract

In this study, we investigated the characteristics of the n-type Ni/SiC ohmic contact using the laser annealing process on thin wafers. The electrical behavior of the ohmic contacts was tested in 4H-SiC JBS diode devices. As a result, a wafer thickness of 100 μm in the 4H-SiC JBS diode achieved a forward voltage of 1.33 V at 20 A with a laser annealing process using Ni silicide. Using a laser annealing process on a wafer thickness of 100 μm, an on-resistance decrease of almost 22% was demonstrated. Based on our experimental results, we suggest an alternative laser annealing fabrication scheme to obtain low on-resistance SiC power devices with thin structures after SiC grinding.

Keywords: silicon carbide; Junction Barrier Schottky; diode; wafer thinning; laser annealing

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MDPI and ACS Style

Kim, K.; Kang, Y.; Yun, S.; Yang, C.; Jung, E.; Hong, J.; Kim, K. Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures. Coatings 2022, 12, 777. https://doi.org/10.3390/coatings12060777

AMA Style

Kim K, Kang Y, Yun S, Yang C, Jung E, Hong J, Kim K. Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures. Coatings. 2022; 12(6):777. https://doi.org/10.3390/coatings12060777

Chicago/Turabian Style

Kim, Kihyun, Yehwan Kang, Seungbok Yun, Changheon Yang, Eunsik Jung, Jeongsoo Hong, and Kyunghwan Kim. 2022. "Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures" Coatings 12, no. 6: 777. https://doi.org/10.3390/coatings12060777

APA Style

Kim, K., Kang, Y., Yun, S., Yang, C., Jung, E., Hong, J., & Kim, K. (2022). Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures. Coatings, 12(6), 777. https://doi.org/10.3390/coatings12060777

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Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures

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