Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation
Abstract
:1. Introduction
2. Materials and Methods
3. Results
4. Discussion
4.1. Microstructure Evolution
4.2. Coupling between Residual Stress and Microstructure
4.3. Electrical Film Properties
4.4. Potential Applications
5. Summary and Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
Appendix A
Appendix A.1. Film Thicknesses
Run # | Rate [nm/s] | Measured Thickness [µm] |
---|---|---|
Si1 | 4.03 | |
Si2 | 4.94 | |
Si3 | 4.25 | |
Si4 | 3.83 | |
Si5 | 4.29 | |
Si6 | 4.34 | |
Si7 | 4.30 | |
Si8 | 3.68 | |
Si9 | 4.05 | |
Si10 | 5.65 |
Appendix A.2. Roughness-Measurements
Appendix A.3. Void-Fraction Analysis
Appendix A.4. Exponential Fits
Appendix A.5. Depositions on (111)-Oriented Si
Appendix A.6. Boron Concentration in the Thin Films
References
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Run # | Rate [nm/s] | Roughness [nm] | Void Fraction [%] | ] | Residual Stress [MPa] | ||||
---|---|---|---|---|---|---|---|---|---|
Si | SiO2 | Si | SiO2 | Si | SiO2 | Si | SiO2 | ||
Si1 | 32.9 | 31.1 | 0.03 | 0.72 | −41.9 | 6.0 | |||
Si2 | 12.7 | 12.0 | 0.14 | 1.17 | −31.6 | 8.9 | |||
Si3 | 8.2 | 7.6 | 0.16 | 1.38 | −29.1 | 40.2 | |||
Si4 | 7.1 | 6.5 | 0.31 | 3.70 | −18.3 | 30.2 | |||
Si5 | 6.5 | 3.7 | 0.41 | 6.06 | −17.5 | 31.1 | |||
Si6 | 3.5 | 3.4 | 0.63 | 10.89 | −16.9 | 38.0 | |||
Si7 | 0.9 | 3.0 | 0.71 | 11.90 | −12.3 | 30.0 | |||
Si8 | 0.9 | 2.9 | 0.74 | 11.77 | −10.0 | 33.3 | |||
Si9 | 0.6 | 2.4 | 0.92 | 29.66 | −7.0 | 35.2 | |||
Si10 | 0.2 | 1.5 | 2.08 | 68.37 | −6.7 | 38.6 |
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Dahl-Hansen, R.P.; Stange, M.; Sunde, T.O.; Ulyashin, A. Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation. Coatings 2024, 14, 808. https://doi.org/10.3390/coatings14070808
Dahl-Hansen RP, Stange M, Sunde TO, Ulyashin A. Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation. Coatings. 2024; 14(7):808. https://doi.org/10.3390/coatings14070808
Chicago/Turabian StyleDahl-Hansen, Runar Plünnecke, Marit Stange, Tor Olav Sunde, and Alexander Ulyashin. 2024. "Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation" Coatings 14, no. 7: 808. https://doi.org/10.3390/coatings14070808