Surface Morphology of Silicon Waveguide after Reactive Ion Etching (RIE)
Abstract
:1. Introduction
2. Experimental Approach
3. Results and Discussion
3.1. 2-D Side Wall Roughness
3.1.1. Before Reactive Ion Etching
3.1.2. After Reactive Ion Etching
3.2. Bottom Roughness
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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EBL Parameters | RIE Parameters | ||
---|---|---|---|
Sample dimension | 15 mm by 15 mm | RF power | 100 W |
Photoresist | Thickness: 400 nm | SF6 flux | 36 sccm |
Acceleration voltage | 50 keV | O2 flux | 6 sccm |
Exposure dose | 300 μ C/cm2 | Gas pressure | 25 Pa |
development | 4 methyl 2-pentanone soak for 100 s | Temperature | 25 °C |
fixation | Isopropyl alcohol soak for 30 s | DC bias | 50 V |
Roughness (nm) | ||||
---|---|---|---|---|
Average | Maximum | Minimum | Standard Deviation | |
Sample 1 | 11.55 | 18 | 4 | 3.38 |
Sample 2 | 3 | 5 | 2 | 0.69 |
Sample 3 | 3.32 | 5 | 2 | 0.945 |
Sample 4 | 16.18 | 19 | 12 | 2.3 |
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Zheng, Y.; Gao, P.; Jiang, L.; Kai, X.; Duan, J. Surface Morphology of Silicon Waveguide after Reactive Ion Etching (RIE). Coatings 2019, 9, 478. https://doi.org/10.3390/coatings9080478
Zheng Y, Gao P, Jiang L, Kai X, Duan J. Surface Morphology of Silicon Waveguide after Reactive Ion Etching (RIE). Coatings. 2019; 9(8):478. https://doi.org/10.3390/coatings9080478
Chicago/Turabian StyleZheng, Yu, Piaopiao Gao, Lianqiong Jiang, Xiaochao Kai, and Ji’an Duan. 2019. "Surface Morphology of Silicon Waveguide after Reactive Ion Etching (RIE)" Coatings 9, no. 8: 478. https://doi.org/10.3390/coatings9080478