Endo, K.; Migita, S.; Ishikawa, Y.; Matsukawa, T.; O'uchi, S.-i.; Tsukada, J.; Mizubayashi, W.; Morita, Y.; Ota, H.; Yamauchi, H.;
et al. Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs. J. Low Power Electron. Appl. 2014, 4, 110-118.
https://doi.org/10.3390/jlpea4020110
AMA Style
Endo K, Migita S, Ishikawa Y, Matsukawa T, O'uchi S-i, Tsukada J, Mizubayashi W, Morita Y, Ota H, Yamauchi H,
et al. Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs. Journal of Low Power Electronics and Applications. 2014; 4(2):110-118.
https://doi.org/10.3390/jlpea4020110
Chicago/Turabian Style
Endo, Kazuhiko, Shinji Migita, Yuki Ishikawa, Takashi Matsukawa, Shin-ichi O'uchi, Junji Tsukada, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Hitomi Yamauchi,
and et al. 2014. "Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs" Journal of Low Power Electronics and Applications 4, no. 2: 110-118.
https://doi.org/10.3390/jlpea4020110
APA Style
Endo, K., Migita, S., Ishikawa, Y., Matsukawa, T., O'uchi, S. -i., Tsukada, J., Mizubayashi, W., Morita, Y., Ota, H., Yamauchi, H., & Masahara, M.
(2014). Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs. Journal of Low Power Electronics and Applications, 4(2), 110-118.
https://doi.org/10.3390/jlpea4020110