Investigation of Mean-Time-to-Failure Measurements from AlGaN/GaN High-Electron-Mobility Transistors Using Eyring Model
Round 1
Reviewer 1 Report
Your results are not convincing. How do you interpret the behaviour of Figure 6, how are the maxima and minima to be explained? For increasing temperature, MTTF should be increased. The simulations are not convincing.
Author Response
Reviewer wrote:
Your results are not convincing. How do you interpret the behaviour of Figure 6, how are the maxima and minima to be explained? For increasing temperature, MTTF should be increased. The simulations are not convincing.
Our response:
Thank you very much for carefully reviewing our manuscript and providing fruitful suggestions. We appreciate the reviewer’s comment. We have made changes in our manuscript according to reviewer’s comment and observation.
We have considered two acceleration factor. In figure 6, plots are made according to device practical failure results. Theoretically, at 360K temperature and 10V stress, device’s MTTF should be highest (Maxima point). MTTF should be low at 390K and 40V stress (Minima). But practical result is different because device characteristics and behavior is not same. In figure 6, at 380K temperature it was found both maxima and minima. Because, at 380K and 20V, early device degradation was found which rarely found at other temperature.
It is clearly mentioned that increasing temperature will result more device degradation and MTTF values will be decreased. Therefore, adding more voltage instead of one, device degradation enhance results MTTF more low value.
Corresponding changes in Manuscript: Yes, We have added explanation of this theoretical and practical representation of Eyring model.
Reviewer 2 Report
This work by Surajit et. al. presents the study of mean-time-to-failure (MTTF) for AlGaN/GaN HEMTs with the factors of temperature and voltage and explores the gate leakage current at high temperatures for early device deterioration. The experimental design is sound, the results are clearly presented, and the conclusion looks solid. However, the author could consider clarifying the scientific advances to this field and how their work contributes to the research community, as they used the non-commercial GaN HEMTs used for laboratory purposes, which is unavailable to other researchers.
Author Response
Reviewer wrote:
This work by Surajit et. al. presents the study of mean-time-to-failure (MTTF) for AlGaN/GaN HEMTs with the factors of temperature and voltage and explores the gate leakage current at high temperatures for early device deterioration. The experimental design is sound, the results are clearly presented, and the conclusion looks solid. However, the author could consider clarifying the scientific advances to this field and how their work contributes to the research community, as they used the non-commercial GaN HEMTs used for laboratory purposes, which is unavailable to other researchers.
Our response:
Dear reviewer,
Thank you very much for carefully reviewing our manuscript and providing fruitful suggestions. We appreciate the reviewer’s comment.
We have stated that commercial GaN demonstrated very high MTTF > 107 h (line no. 34), this result is extravagant and impractical in a sense that only one voltage condition is present, but the device can be operated in many voltage condition which fluctuates the channel temperature inside device. GaN based device is sensitive to its electric field density, therefore we have considered its MTTF value for both voltage and temperature. Our device and experimental method can be considered as prototype for GaN based device and it can be applicable in commercial GaN also.
Corresponding changes in Manuscript: No.
Round 2
Reviewer 1 Report
Your improvements are sufficient to enable publication now.
