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Journal: Electronics, 2021
Volume: 10
Number: 433
Article:
First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology
Authors:
by
Yue Sun, Xuanwu Kang, Shixiong Deng, Yingkui Zheng, Ke Wei, Linwang Xu, Hao Wu and Xinyu Liu
Link:
https://www.mdpi.com/2079-9292/10/4/433
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