Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study
Abstract
:1. Introduction
2. Simulation Model
3. Simulation Results
4. Discussion
5. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Parameters | Values | Units |
---|---|---|
Schottky barrier height | 1.02 | eV |
Polarization charge density | 1.1 × 1013 | cm–2 |
Hole density in SCPG | 5 × 1017 | cm–3 |
Mobility of 2DEG | 2000 | cm2/v·s |
Mobility of electron | 800 | cm2/v·s |
Mobility of hole | 10 | cm2/v·s |
Source and Drain ohmic contact resistance | 0.5 | Ω·mm |
Contact resistance of p-GaN ohmic contact | 50 | Ω·mm |
Trap energy level Et from valance band | 0.86 | eV |
Concentration of acceptor traps Nt | 5 × 1017 | cm–3 |
Capture cross section of traps | 1 × 10–15 | cm2 |
Degeneracy factor D of traps | 1 | - |
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Lin, W.; Wang, M.; Sun, H.; Xie, B.; Wen, C.P.; Hao, Y.; Shen, B. Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study. Electronics 2021, 10, 942. https://doi.org/10.3390/electronics10080942
Lin W, Wang M, Sun H, Xie B, Wen CP, Hao Y, Shen B. Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study. Electronics. 2021; 10(8):942. https://doi.org/10.3390/electronics10080942
Chicago/Turabian StyleLin, Wei, Maojun Wang, Haozhe Sun, Bing Xie, Cheng P. Wen, Yilong Hao, and Bo Shen. 2021. "Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study" Electronics 10, no. 8: 942. https://doi.org/10.3390/electronics10080942