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Journal: Electronics, 2022
Volume: 11
Number: 1540

Article: Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers
Authors: by Mamathamba Kalishettyhalli Mahadevaiah, Eduardo Perez, Marco Lisker, Markus Andreas Schubert, Emilio Perez-Bosch Quesada, Christian Wenger and Andreas Mai
Link: https://www.mdpi.com/2079-9292/11/10/1540

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