Breakdown Voltage Enhancement in AlGaN HEMTs with Local p-Doped Region in the Back-Barrier

Round 1

Reviewer 1 Report

Authors must include a process recipe for the proposed design i.e. local p-doped region in the traditional AlGaN back barrier structure.

Electrothermal simulation results, PAE results and RF FoMs results should be included in the revised manuscript.

Author Response

Thank you for your sincere affirmation and thoughtful comments, and we have revised and modified the manuscript carefully according to the comments and suggestions. Please see the attachment.

Author Response File: Author Response.docx

Reviewer 2 Report

The authors reported a simulation paper on GaN HEMTs with local p-doped region in back barrier. The questions/comments are:

Have authors validated any of these results? How can we ensure these results are applicable to real application. In my opinion some of these results need to be validated again experimental results.

Why is there no figure to show the energy band diagram of the simulated structures? This should show the surface potential and electron concentration of the 2DEG.

In figure 2, what are the biasing conditions? This should be stated clearly in the caption.

In figure 4, the first graph must be called 'output' as the second has been named 'transfer'.

What are the challenges in p-doping of AlGaN material?

What are the polarisation values used in simulations?

The English of the paper needs improvements.

 

Author Response

Thank you for your sincere affirmation and thoughtful comments, and we have revised and modified the manuscript carefully according to the comments and suggestions. Please see the attachment.

Author Response File: Author Response.docx

Round 2

Reviewer 1 Report

no more comments

Author Response

Thank you for your  affirmation，and we have modified the English carefully.

Reviewer 2 Report

I believe the methodology used needs to be revised before any claims can be made based on these simulation results. If authors don't have a device of such kind, they can obtain any GaN based HEMT device, characterise it and calibrate the simulation results to experimental data. Later, they can add/remove doping profiles to the calibrated device and study the effect of local p-doped region. Once the methodology has been addressed then there are other minor issues authors can work on. I am giving a few examples here:

-  What is Al(0.15)GaN given in Figure 1? Does this mean Al(0.15)Ga(0.85)N?

-  What is the Source voltage? Gate voltage needs to be given with respect to the Source voltage. Authors have given in the manuscript "Vgate=-10V".

- I understand that authors adjust the polarisation magnitude with "polar.scale" parameter. But without mentioning the exact value for polarisation charge, this has no meaning for readers.

- English of the manuscript is poor and needs to be improved! 

Author Response

Thank you for your sincere affirmation and thoughtful comments, and we have revised and modified the manuscript carefully according to the comments and suggestions. Please see the attachment.

Author Response File: Author Response.pdf

Round 3

Reviewer 2 Report

What is Figure 1 in the latest reply? Is this supposed to be an output graph? If this is an output then it need to be ID versus VDS. If this is a transfer, it needs to be ID versus VGS. Moreover, calibration needs to be done against various biasing conditions. The experiments and simulation results given in the reply do not meet the requirement for a good TCAD model calibration. It only shows a very poor level of calibration. I hope to see improved work of authors in their future works.

Author Response

Thank you for your sincere affirmation,and we have revised and modified the manuscript carefully according to the comments and suggestions.Please see the attachment.

Author Response File: Author Response.docx