Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory
Abstract
:1. Introduction
2. Simulation Design and Results
2.1. 3D NAND Flash Memory Structure Setup
2.2. Simulation Setup
2.3. Analysis of hDensity
2.4. Analysis of Potential to Channel and WL
3. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Kim, B.; Kang, M. Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory. Electronics 2022, 11, 2738. https://doi.org/10.3390/electronics11172738
Kim B, Kang M. Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory. Electronics. 2022; 11(17):2738. https://doi.org/10.3390/electronics11172738
Chicago/Turabian StyleKim, Beomsu, and Myounggon Kang. 2022. "Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory" Electronics 11, no. 17: 2738. https://doi.org/10.3390/electronics11172738