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Journal: Electronics, 2022
Volume: 11
Number: 2744

Article: Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts
Authors: by In-Geun Lee, Hyeon-Bhin Jo, Ji-Min Baek, Sang-Tae Lee, Su-Min Choi, Hyo-Jin Kim, Wan-Soo Park, Ji-Hoon Yoo, Dae-Hong Ko, Tae-Woo Kim, Sang-Kuk Kim, Jae-Gyu Kim, Jacob Yun, Ted Kim, Jung-Hee Lee, Chan-Soo Shin, Jae-Hak Lee, Kwang-Seok Seo and Dae-Hyun Kim
Link: https://www.mdpi.com/2079-9292/11/17/2744

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