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Journal: Electronics, 2022
Volume: 11
Number: 3582
Article:
Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach
Authors:
by
Ke Wang, Haodong Jiang, Yiming Liao, Yue Xu, Feng Yan and Xiaoli Ji
Link:
https://www.mdpi.com/2079-9292/11/21/3582
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