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Journal: Electronics, 2022
Volume: 11
Number: 4022
Article:
A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components
Authors:
by
Kewei Wang, Xinyi Zhang, Bo Li, Duoli Li, Fazhan Zhao, Jianhui Bu and Zhengsheng Han
Link:
https://www.mdpi.com/2079-9292/11/23/4022
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