A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components
, Xinyi Zhang 1,2,3, Bo Li 1,2, Duoli Li 1,2, Fazhan Zhao 1,2, Jianhui Bu 1,2,* and Zhengsheng Han 1,2,3,*
Round 1
Reviewer 1 Report
Revise the abstract section especially pointing out the technique applied to the proposed BSIMSOI method and the performance improvement compared to the existing schemes. Reviewer suggest the comparison analysis should be carried out in the introduction section and introduce compact model & proposed methodology shortly in Abstract section. Expand the terms BSIMSOI & TCAD as it’s first time introduced in the abstract section. The term FDSOI is already abbreviated in abstract section, so no need to elaborate again in introduction section. The theoretical FDSOI structure model should be included after introduction section for better understanding. Present the percentage of improvement achieved using the proposed model compared to existing one. Revise the conclusion section by including numeric values of enhancement of the results listed in section 4.
Author Response
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Reviewer 2 Report
Journal: Electronics
Manuscript Number: 2042086
Title: Compact Model for Single Event Transient in FDSOI MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components
The authors presented a modeling method for the Single Event Transient current in Fully Depleted Silicon On Insulator MOSFET where all three components are modeled individually. The BSIMSOI model has been integrated into this model to calculate the bipolar amplification current. An improved model has been proposed that takes into account the effect of the back-gate voltage on the Single Event Transient of the Fully Depleted Silicon On Insulator devices.
The paper is interesting, well-written, sound, and it contributes to the field of MOSFET. It can be published in Electronics after addressing the following comments.
My comments:
1. There is no need for the abbreviation in the sentence “distribution on of the induced electron-hole pairs (ehps)”. We usually use abbreviations for expressions that we will use many times.
2. The authors used some abbreviations in the manuscript title. I do not prefer to use abbreviations in the title.
3. In the sentence “This process will increase the body potential and cause”. I prefer to write “This process will increase the body's potential and cause”
4. The introduction section needs some enhancement with more previous studies.
Author Response
Please see the attachment.
Author Response File: Author Response.pdf
Round 2
Reviewer 1 Report
Authors have successfully address all of the comments.
