Lattice Relaxation Forward Negative Coulomb Drag in Hopping Regime

Liu, Dongyang; Wang, Jiawei; Bi, Chong; Li, Mengmeng; Lu, Nianduan; Chen, Zhekai; Li, Ling

doi:10.3390/electronics11081273

Open AccessArticle

Lattice Relaxation Forward Negative Coulomb Drag in Hopping Regime

by

Dongyang Liu

^1,2

,

Jiawei Wang

^1,2,3,*,

Chong Bi

¹,

Mengmeng Li

¹

,

Nianduan Lu

^1,2,

Zhekai Chen

⁴ and

Ling Li

^1,2

¹

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

²

University of Chinese Academy of Sciences, Beijing 100049, China

³

Peng Cheng Laboratory, Department of Mathematics and Theories, No. 2, Xingke 1st Street, Nanshan, Shenzhen 518055, China

⁴

School of Physics Sciences, Nankai University, Tianjin 300071, China

^*

Author to whom correspondence should be addressed.

Electronics 2022, 11(8), 1273; https://doi.org/10.3390/electronics11081273

Submission received: 25 February 2022 / Revised: 29 March 2022 / Accepted: 12 April 2022 / Published: 17 April 2022

(This article belongs to the Section Electronic Materials, Devices and Applications)

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Abstract

Quasi-particle formed by electron and the dressed deformed lattice is important to accurately interpret the properties of various disordered/amorphous materials. However, a unified understanding of the drag effect, in particular the negative Coulomb drag in hopping systems, remains an open challenge. This work proposes a theoretic framework to account for both positive and negative Coulomb drag in dual-1D-hopping systems by considering both the electron-electron correlation and the electron-phonon correlation. It is found that lattice relaxation in the active line of the hopping system may give rise to an inverse energetic pumping force in the passive line, causing negative Coulomb drag. The mobility of the negative coulomb drag can approach the scale of 10⁻⁵cm²V⁻¹s⁻¹, especially at low temperature, high carrier-density, and narrow inter-spacing separation. More intriguingly, the positive drag could be recovered by varying the energy fluctuation and suppressing the electron-phonon interactions, but with a much lower magnitude. Our work could serve as a universal model for the Coulomb drag effect in the hopping system.

Keywords: hopping regime; negative coulomb drag; positive coulomb drag

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MDPI and ACS Style

Liu, D.; Wang, J.; Bi, C.; Li, M.; Lu, N.; Chen, Z.; Li, L. Lattice Relaxation Forward Negative Coulomb Drag in Hopping Regime. Electronics 2022, 11, 1273. https://doi.org/10.3390/electronics11081273

AMA Style

Liu D, Wang J, Bi C, Li M, Lu N, Chen Z, Li L. Lattice Relaxation Forward Negative Coulomb Drag in Hopping Regime. Electronics. 2022; 11(8):1273. https://doi.org/10.3390/electronics11081273

Chicago/Turabian Style

Liu, Dongyang, Jiawei Wang, Chong Bi, Mengmeng Li, Nianduan Lu, Zhekai Chen, and Ling Li. 2022. "Lattice Relaxation Forward Negative Coulomb Drag in Hopping Regime" Electronics 11, no. 8: 1273. https://doi.org/10.3390/electronics11081273

APA Style

Liu, D., Wang, J., Bi, C., Li, M., Lu, N., Chen, Z., & Li, L. (2022). Lattice Relaxation Forward Negative Coulomb Drag in Hopping Regime. Electronics, 11(8), 1273. https://doi.org/10.3390/electronics11081273

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