SPICE-Aided Nonlinear Electrothermal Modeling of an IGBT Module
Abstract
:1. Introduction
2. Model Form
2.1. Electrical Model
- (a)
- DC properties of the output bipolar structure and the input MOS structure including the sub-threshold effect and the dependence of the threshold voltage on its junction temperature, the dependence of the current amplification factor of the BJT structure on the collector current and temperature, and leakage currents (DC model of the IGBT);
- (b)
- Series resistance of emitter RE and collector RC modeled by linear resistors, the resistance of which linearly depends on the transistor junction temperature;
- (c)
- The dependence of the capacitance between each pair of the leads of the IGBT on voltage and the junction temperature represented by the controlled current sources GCGE, GCCE, and GCGC.
- the diffusion and generation-recombination components of the current of this component (DC diode model), described using the same equation as for the power LED presented, i.e., in [17];
- the linear dependence of the diode series resistance on its junction temperature;
- a nonlinear capacitance of the p-n junction depending on the junction voltage and temperature represented by the current source GCD.
2.2. Model for Heat Generation
2.3. Thermal Model
2.4. Model Parameter Estimation
- electrical parameters describing I-V and C-V characteristics of the module components;
- thermal parameters describing the dependence of the junction temperature of each module component on the power lost in these components.
3. Investigations Results
3.1. Investigated Module
3.2. DC Module Characteristics
3.3. Characteristics of the Half-Bridge Converter with an IGBT Module
4. Influence of Thermal Model Form on the Computations Results
5. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Parameter | Module without Any Heat-Sink | Module on the Heat-Sink | ||||
---|---|---|---|---|---|---|
Rthk0 [K/W] | ck | bk [W] | Rthk0 [K/W] | ck | bk [W] | |
RthT1 = RthT2 | 11.5 | 0.522 | 3.8 | 2.5 | 0.88 | 20 |
RthD1 = RthD2 | 12 | 0.5 | 3.8 | 4 | 0.55 | 20 |
RthT1T2 | 11.5 | 0.53 | 3.8 | 2.4 | 0.56 | 15 |
RthT1D1 = RthT2D2 | 8 | 0.48 | 3.8 | 2.6 | 0.58 | 15 |
RthD1D2 | 8.5 | 0.45 | 3.8 | 3 | 0.4 | 15 |
RthT1D2 = RthT2D1 | 8 | 0.48 | 3.8 | 2.6 | 0.55 | 15 |
RthT1Th = RthT2Th | 7.5 | 0.4 | 3.8 | 1.9 | 0.526 | 15 |
RthD1Th = RthD2Th | 8.5 | 0.353 | 3.8 | 2 | 0.5 | 15 |
Source | Taking into Account: | |||||
---|---|---|---|---|---|---|
Ambient Temperature | Self-Heating | Mutual Thermal Couplings | Rth(p) or Rth(T) | Thermal Inertia | Sub-Threshold Effect | |
[12] | YES | YES | NO | NO | YES | NO |
[31] | YES | YES | YES | YES | YES | NO |
[34] | YES | YES | YES | NO | YES | YES |
This article | YES | YES | YES | YES | YES | YES |
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Górecki, K.; Górecki, P. SPICE-Aided Nonlinear Electrothermal Modeling of an IGBT Module. Electronics 2023, 12, 4588. https://doi.org/10.3390/electronics12224588
Górecki K, Górecki P. SPICE-Aided Nonlinear Electrothermal Modeling of an IGBT Module. Electronics. 2023; 12(22):4588. https://doi.org/10.3390/electronics12224588
Chicago/Turabian StyleGórecki, Krzysztof, and Paweł Górecki. 2023. "SPICE-Aided Nonlinear Electrothermal Modeling of an IGBT Module" Electronics 12, no. 22: 4588. https://doi.org/10.3390/electronics12224588