Article Versions Notes

Liu Y, Cao R, Tian J, Cai Y, Mei B, Zhao L, Cui S, Lv H, Zeng X, Xue Y. Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory. Electronics. 2023; 12(24):5028. https://doi.org/10.3390/electronics12245028

Liu, Yan, Rongxing Cao, Jiayu Tian, Yulong Cai, Bo Mei, Lin Zhao, Shuai Cui, He Lv, Xianghua Zeng, and Yuxiong Xue. 2023. "Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory" Electronics 12, no. 24: 5028. https://doi.org/10.3390/electronics12245028

Liu, Y., Cao, R., Tian, J., Cai, Y., Mei, B., Zhao, L., Cui, S., Lv, H., Zeng, X., & Xue, Y. (2023). Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory. Electronics, 12(24), 5028. https://doi.org/10.3390/electronics12245028