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Journal: Electronics, 2023
Volume: 12
Number: 1424

Article: p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT
Authors: by Xiaoyu Ding, Xu Yuan, Tao Ju, Guohao Yu, Bingliang Zhang, Zhongkai Du, Zhongming Zeng, Baoshun Zhang and Xinping Zhang
Link: https://www.mdpi.com/2079-9292/12/6/1424

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