Impact of Pre-Annealed ZrO₂ Interfacial Layer on the Ferroelectric Behavior of Hf_0.5Zr_0.5O₂

Round 1

Reviewer 1 Report

Comments and Suggestions for Authors

1- What specific techniques were employed in the pre-annealing process of the ZrO2 layer, and how did they contribute to inducing the orthorhombic phase in HZO?

2- Can you elaborate on the reasons for choosing the specific capacitor configurations (W/HZO/TiN/p+ Si, W/HZO/(pre-annealed) ZrO2/TiN/p+ Si, W/HZO/SiO2/TiN/p+ Si, W/HZO/SiO2/p+ Si) and their relevance to the study?

3- The abstract mentions the superior performance of the W/HZO/(pre-annealed) ZrO2/TiN/p+ Si capacitor. What specific features or properties contribute to this superior ferroelectric performance?

4- The introduction mentions using dopants (Si, Al, Zr, Y, Sr, La, and Gd) to enhance device performance. Could you elaborate on how these dopants specifically contribute to stabilizing ferroelectricity in HfO2-based films?

5- The challenges of stacking HZO on a metal electrode are discussed. How do these challenges impact the application of ferroelectric HZO in MOS devices, and are there potential solutions proposed in the literature?

6- In the context of recent studies on ZrO2 interfacial layers, how does a pre-annealing treatment represent a novel approach, and what advantages does it offer over other methods?

7- Consider providing a brief statement about the potential practical applications or implications of the study's findings.

8- The results and discussion set a solid foundation, and additional insights into the research's broader impact could enhance the reader's overall engagement.

Comments on the Quality of English Language

English can be double-checked for clarity.

Author Response

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Author Response File: Author Response.pdf

Reviewer 2 Report

Comments and Suggestions for Authors

The authors presented very interesting research on the ferroelectricity performance enhancement of HZO layer by adding a pre-annealed ZrO thin film. The authors optimized the thicknesses of ZrO and HZO layers to achieve the peak 2Pr value, and proved the improvement is related to the phase of the HZO layer. This work is worth to be published.

A small concern from the reviewer is the format of the figures, like figure 1 and figure 4. It’s better to have a whole one figure in the same page. It will be friendly to the readers

Author Response

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Author Response File: Author Response.pdf

Reviewer 3 Report

Comments and Suggestions for Authors

 

Authors have prepared a well-discussed work which presents a well-considered up-to-date aspect which has interest for all. Both the background and the motivations are well explained. The organization of this manuscript is proper, and the findings are new. So, it is acceptable.

Comments on the Quality of English Language

Moderate editing of English language required

Author Response

Please see the attachment.

Author Response File: Author Response.pdf

Reviewer 4 Report

Comments and Suggestions for Authors

The paper titled "Impact of Pre-Annealed ZrO₂ Interfacial Layer on the Ferroelectric Behavior of Hf_0.5Zr_0.5O₂" focuses on a systematic investigation of the influence of pre-annealed ZrO₂ interfacial layer on the ferroelectric properties of Hf_0.5Zr_0.5O₂ capacitors. The study explores various capacitor configurations and reveals significant variations in remanent polarization. The findings of the study offer a comprehensive explanation and experimental verification of the impact of pre-annealed ZrO₂ on ferroelectric devices, providing valuable insights for the optimization of ferroelectric properties.

The manuscript is well-structured and effectively communicates the research findings. The experimental approach is sound, and the results are presented clearly. Based on the quality of the paper and its potential impact, I recommend accepting the manuscript in its current form.

Comments on the Quality of English Language

Minor editing of English language required

Author Response

Please see the attachment.

Author Response File: Author Response.pdf

Round 2

Reviewer 1 Report

Comments and Suggestions for Authors

Accept in the present form!