Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors
Abstract
:1. Introduction
2. Device Fabrication and Characterization
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Lee, G.; Yang, J.; Yeom, M.J.; Yoon, S.; Yoo, G. Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors. Electronics 2024, 13, 2783. https://doi.org/10.3390/electronics13142783
Lee G, Yang J, Yeom MJ, Yoon S, Yoo G. Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors. Electronics. 2024; 13(14):2783. https://doi.org/10.3390/electronics13142783
Chicago/Turabian StyleLee, Gyuhyung, Jeongyong Yang, Min Jae Yeom, Sisung Yoon, and Geonwook Yoo. 2024. "Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors" Electronics 13, no. 14: 2783. https://doi.org/10.3390/electronics13142783