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Journal: Electronics, 2024
Volume: 13
Number: 3402

Article: Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions
Authors: by Cuicui Liu, Gang Guo, Huilin Shi, Zheng Zhang, Futang Li, Yanwen Zhang and Jinhua Han
Link: https://www.mdpi.com/2079-9292/13/17/3402

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