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Volume 13
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10.3390/electronics13173429
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Article

Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure

by
Marek Wzorek
1,*,
Marek Ekielski
1,
Krzysztof Piskorski
1,
Jarosław Tarenko
1,2,
Michał A. Borysiewicz
1,
Ernest Brzozowski
1 and
Andrzej Taube
1
1
Łukasiewicz Research Network—Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warsaw, Poland
2
Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
*
Author to whom correspondence should be addressed.
Electronics 2024, 13(17), 3429; https://doi.org/10.3390/electronics13173429
Submission received: 25 June 2024 / Revised: 23 August 2024 / Accepted: 26 August 2024 / Published: 29 August 2024
(This article belongs to the Special Issue New Advances in Semiconductor Devices/Circuits)
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Abstract

In this study, metal–silicide-based contacts to GaN-cap/AlGaN/AlN-spacer/GaN-on-Si heterostructure were investigated. Planar Schottky diodes with Cu-covered anodes comprising silicide layers of various metal–silicon (M–Si) compositions were fabricated and characterized in terms of their electrical parameters and thermal stability. The investigated contacts included Ti–Si, Ta–Si, Co–Si, Ni–Si, Pd–Si, Ir–Si, and Pt–Si layers. Reference diodes with pure Cu or Au/Ni anodes were also examined. To test the thermal stability, selected devices were subjected to subsequent annealing steps in vacuum at incremental temperatures up to 900 °C. The Cu/M–Si anodes showed significantly better thermal stability than the single-layer Cu contact, and in most cases exceeded the stability of the reference Au/Ni contact. The work functions of the sputtered thin layers were determined to support the discussion of the formation mechanism of the Schottky barrier. It was concluded that the barrier heights were dependent on the M–Si composition, although they were not dependent on the work function of the layers. An extended, unified Schottky barrier formation model served as the basis for explaining the complex electrical behavior of the devices under investigation.
Keywords: metal–silicide; AlGaN/GaN heterostructure; Schottky barrier; work function; high-electron mobility transistor (HEMT); thermal stability; GaN-on-Si; Au-free metal–silicide; AlGaN/GaN heterostructure; Schottky barrier; work function; high-electron mobility transistor (HEMT); thermal stability; GaN-on-Si; Au-free

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MDPI and ACS Style

Wzorek, M.; Ekielski, M.; Piskorski, K.; Tarenko, J.; Borysiewicz, M.A.; Brzozowski, E.; Taube, A. Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure. Electronics 2024, 13, 3429. https://doi.org/10.3390/electronics13173429

AMA Style

Wzorek M, Ekielski M, Piskorski K, Tarenko J, Borysiewicz MA, Brzozowski E, Taube A. Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure. Electronics. 2024; 13(17):3429. https://doi.org/10.3390/electronics13173429

Chicago/Turabian Style

Wzorek, Marek, Marek Ekielski, Krzysztof Piskorski, Jarosław Tarenko, Michał A. Borysiewicz, Ernest Brzozowski, and Andrzej Taube. 2024. "Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure" Electronics 13, no. 17: 3429. https://doi.org/10.3390/electronics13173429

APA Style

Wzorek, M., Ekielski, M., Piskorski, K., Tarenko, J., Borysiewicz, M. A., Brzozowski, E., & Taube, A. (2024). Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure. Electronics, 13(17), 3429. https://doi.org/10.3390/electronics13173429

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