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Review

Hardware Testing Methodologies for Wide Bandgap High-Power Converters

by
Zibo Chen
1,*,
Zhicheng Guo
2,
Chen Chen
1 and
Alex Q. Huang
1
1
Semiconductor Power Electronics Center, The University of Texas at Austin, Austin, TX 78758, USA
2
Power Electronics & Energy Conversion (PEEC) Lab, Arizona State University, Tempe, AZ 85281, USA
*
Author to whom correspondence should be addressed.
Electronics 2024, 13(19), 3918; https://doi.org/10.3390/electronics13193918
Submission received: 30 August 2024 / Revised: 24 September 2024 / Accepted: 27 September 2024 / Published: 3 October 2024
(This article belongs to the Special Issue Advances in Power Converter Design, Control and Applications)

Abstract

Wide bandgap (WBG) power semiconductor devices are increasingly replacing silicon IGBTs in high-power and high-voltage power electronics applications. However, there is a significant gap in the literature regarding efficient testing methodologies for high-power and high-voltage converters under constrained laboratory resources. This paper addresses this gap by presenting comprehensive, hardware-focused testing methodologies for high-power and high-voltage WBG power semiconductor-based converter bring-up before the control validation phase steps in. The proposed methods enable thorough evaluation and validation of converter hardware, including device switching characteristics, driving circuit functionality, thermal management performance, insulation integrity, and sustained operation at full power. We utilized the double pulse test (DPT) to characterize switching performance in a two-level phase leg configuration, extract circuit parasitics, and validate magnetic components. The DPT was further applied to optimize gate driving circuits, validate overcurrent protection mechanisms, and measure device on-resistance. Additionally, a multicycle test was introduced to rapidly assess steady-state converter performance and estimate efficiency. Recognizing the critical role of thermal management in high-power converters, our methodologies extend to the experimental extraction of key thermal parameters—such as junction-to-ambient thermal resistance and thermal capacitance—via a heat loss injection method. A correlation method between temperature sensor measurements and junction temperature is presented to enhance the accuracy of device temperature monitoring during tests. To ensure reliability and safety, dielectric withstand tests and partial discharge measurements were conducted at both component and converter levels under conventional 60 Hz sinusoidal and high-frequency PWM waveforms. Finally, we highlight the importance of testing converters under full voltage, current, and thermal conditions through power circulating tests with minimal power consumption, applicable to both non-isolated and isolated high-power converters. Practical examples are provided to demonstrate the effectiveness and applicability of these hardware testing methodologies.
Keywords: silicon carbide (SiC); dynamic characterization; double pulse test (DPT); thermal impedance extraction; partial discharge (PD) measurements; power cycling test silicon carbide (SiC); dynamic characterization; double pulse test (DPT); thermal impedance extraction; partial discharge (PD) measurements; power cycling test

Share and Cite

MDPI and ACS Style

Chen, Z.; Guo, Z.; Chen, C.; Huang, A.Q. Hardware Testing Methodologies for Wide Bandgap High-Power Converters. Electronics 2024, 13, 3918. https://doi.org/10.3390/electronics13193918

AMA Style

Chen Z, Guo Z, Chen C, Huang AQ. Hardware Testing Methodologies for Wide Bandgap High-Power Converters. Electronics. 2024; 13(19):3918. https://doi.org/10.3390/electronics13193918

Chicago/Turabian Style

Chen, Zibo, Zhicheng Guo, Chen Chen, and Alex Q. Huang. 2024. "Hardware Testing Methodologies for Wide Bandgap High-Power Converters" Electronics 13, no. 19: 3918. https://doi.org/10.3390/electronics13193918

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