A Si IGBT/SiC MOSFET Hybrid Isolated Bidirectional DC–DC Converter for Reducing Losses and Costs of DC Solid State Transformer

Huang, Jun; Wang, Yu; Li, Zhenfeng; Zhu, Hongbo; Li, Kai

doi:10.3390/electronics13040801

Open AccessArticle

A Si IGBT/SiC MOSFET Hybrid Isolated Bidirectional DC–DC Converter for Reducing Losses and Costs of DC Solid State Transformer

by

Jun Huang

^1,*,

Yu Wang

¹,

Zhenfeng Li

²,

Hongbo Zhu

¹ and

Kai Li

¹

State Key Laboratory of Reliability and Intelligence of Electrical Equipment, School of Electrical Engineering, Hebei University of Technology, Tianjin 300401, China

²

Zhejiang Huayun Electric Power Engineering Design & Consultation Co., Ltd., Hangzhou 310014, China

^*

Author to whom correspondence should be addressed.

Electronics 2024, 13(4), 801; https://doi.org/10.3390/electronics13040801

Submission received: 30 December 2023 / Revised: 3 February 2024 / Accepted: 16 February 2024 / Published: 19 February 2024

(This article belongs to the Topic Power Electronics Converters)

Download

Browse Figures

Review Reports Versions Notes

Abstract

The DC solid state transformer (DCSST) is a crucial component for connecting buses of different voltage levels in the DC distribution grid. This paper proposes a Si IGBT/SiC MOSFET hybrid isolated bidirectional DC–DC converter and an optimized modulation strategy (OMS) to reduce the losses and costs of DCSST. Based on the analysis of topology and operating principles, a duty-cycle modulation strategy is proposed and the converter is modeled by the time domain analysis (TDA) method. Through the analysis of switching characteristics, an optimization problem is established, which aims to reduce the conduction losses of switches while ensuring zero-voltage switching (ZVS) for all switches and low-current turn-off for IGBTs simultaneously. The optimization problem is solved by the augmented Lagrangian genetic algorithm (ALGA), and the OMS for the proposed converter is deduced. Finally, a 2 kW experimental prototype with the primary voltage of 405–495 V and the secondary voltage of 150 V is built to verify the effectiveness of the proposed topology and OMS. The switching costs of the proposed converter is reduced by 27.3% and the efficiency is improved by up to 4.04% compared to the existing method.

Keywords: hybrid-switch DC–DC converter; duty-cycle modulation; optimized modulation strategy; switching characteristics; DC solid state transformer

Share and Cite

MDPI and ACS Style

Huang, J.; Wang, Y.; Li, Z.; Zhu, H.; Li, K. A Si IGBT/SiC MOSFET Hybrid Isolated Bidirectional DC–DC Converter for Reducing Losses and Costs of DC Solid State Transformer. Electronics 2024, 13, 801. https://doi.org/10.3390/electronics13040801

AMA Style

Huang J, Wang Y, Li Z, Zhu H, Li K. A Si IGBT/SiC MOSFET Hybrid Isolated Bidirectional DC–DC Converter for Reducing Losses and Costs of DC Solid State Transformer. Electronics. 2024; 13(4):801. https://doi.org/10.3390/electronics13040801

Chicago/Turabian Style

Huang, Jun, Yu Wang, Zhenfeng Li, Hongbo Zhu, and Kai Li. 2024. "A Si IGBT/SiC MOSFET Hybrid Isolated Bidirectional DC–DC Converter for Reducing Losses and Costs of DC Solid State Transformer" Electronics 13, no. 4: 801. https://doi.org/10.3390/electronics13040801

APA Style

Huang, J., Wang, Y., Li, Z., Zhu, H., & Li, K. (2024). A Si IGBT/SiC MOSFET Hybrid Isolated Bidirectional DC–DC Converter for Reducing Losses and Costs of DC Solid State Transformer. Electronics, 13(4), 801. https://doi.org/10.3390/electronics13040801

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Menu

A Si IGBT/SiC MOSFET Hybrid Isolated Bidirectional DC–DC Converter for Reducing Losses and Costs of DC Solid State Transformer

Abstract

Share and Cite

Article Metrics

Article Access Statistics

Further Information

Guidelines

MDPI Initiatives

Follow MDPI