Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers
Round 1
Reviewer 1 Report
Tye paper draft "Study on Characteristics of Enhancement-Mode Gallium-Nitride High-2Electron-Mobility Transistor for the Design of Gate Drivers" present
some important results. The paper is well written and few minor comments as below
Fig. 3b: Need explanation with references the nature of curve - why thete is changes after LD = 0.1 uH?
What is the behavior of Vds,max with LD in full scale
Fig. 5a: Whey there is current steps with LS - need explanation with reference.
Otherwise the paper is ready to go.
Author Response
1. Fig. 3b: Need explanation with references the nature of curve - why the is changes after LD = 0.1 uH? What is the behavior of Vds,max with LD in full scale
Ans:
Thank you for your comments.
Since I added Fig. 2, the number of the figure will be changed.
For example, Fig. 3 changes to Fig. 4.
For the illustration in Fig. 4, I add lines #102 through #108 in this MS.
2. Fig. 5a: Whey there is current steps with LS - need explanation with reference.
Ans:
Since I added Fig. 2, the number of the figure will be changed.
For example, Fig. 5(a) changes to Fig. 6(a).
For the illustration in Fig. 6(a), I add lines #151 through #160 in this MS.
Author Response File: 
Author Response.pdf
Reviewer 2 Report
The MS entitled “Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers” by S. -Y. Tang reports on an experimental study of effects of both current a voltage transient phenomena and the operating frequency on drain-to-source (Vds) and gate-to-source (Vgs) voltages, and drain-to-source current of the transistor.
The paper is well structured and, in general, its English level is acceptable (I recommend a revision of the MS by a native speaker/professional translator).
Results are of interest as GaN FETs are of great interest for high-power high-frequency operation. Therefore, the paper is suitable for publication once the next few points/issues are satisfactorily answered/sorted out:
1 – Author must give more details about the experimental setup (Figure 1). Please, give details (fabricant, model) of the function generator, digital oscilloscope and DC power supply, also the details of the two diodes must be given.
2 – In Section 3, author presents (see line #76 of the MS) simulation results. But the simulations haven’t been presented at this point (even the name of simulator is not given).
3 – I propose to present the code used in simulations as Supplement Materials.
Author Response
1. Author must give more details about the experimental setup (Figure 1). Please, give details (fabricant, model) of the function generator, digital oscilloscope and DC power supply, also the details of the two diodes must be given.
Ans:
Thank you for your comments.
Since I added Fig. 2, the number of the figure will be changed. For example, Fig. 3 changes to Fig. 4.
For the specification in Fig. 1, I added lines #69 through #73 in this MS, and then I added the four items(Fabricant, VRM, IFM and tRR) in Table II and the references to title 16 for the two diodes.
2. In Section 3, author presents (see line #76 of the MS) simulation results. But the simulations haven’t been presented at this point (even the name of simulator is not given).
Ans:
I added the name of the simulation software in lines #82 through #83 in this MS.
3. I propose to present the code used in simulations as Supplement Materials.
Ans:
In Fig, 2, I added a new circuit by using Tina-Ti simulation software.
Author Response File: Author Response.pdf
Round 2
Reviewer 2 Report
Referee Report on MS electronics-934764 (revised version)
Upon reading the new version of the MS I find that my questions and issues have been satisfactorily answered/addressed.
I recommend it for publication.
