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Journal: Electronics, 2020
Volume: 9
Number: 332

Article: Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications
Authors: by Hojun Lee, Ogyun Seok, Taeeun Kim and Min-Woo Ha
Link: https://www.mdpi.com/2079-9292/9/2/332

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