Bipolar Nb3Cl8 Field Effect Transistors
Round 1
Reviewer 1 Report
Comments and Suggestions for AuthorsReview report for Authors:
This manuscript presents a study on the few-layered TMH material Nb3Cl8, acquired using the mechanical exfoliation method. The authors explore the electronic properties of Nb3Cl8-based FETs, revealing intrinsic N-type semiconductor characteristics and enhanced bipolar characteristics through ionic liquid doping. The findings suggest potential applications in optoelectronic studies and insights applicable to other TMH materials. While the study is promising, several points require clarification and improvement.
1.In line 50, the authors stated: “We employ mechanical exfoliation to obtain few-layers Nb3Cl8 from high-quality bulk Nb3Cl8.”
- The authors claim to have obtained high-quality bulk Nb3Cl8 through mechanical exfoliation. However, the basis for this claim (e.g., purity or characterization methods) is not provided. Additionally, the quality of the exfoliated monolayer should be discussed relative to the bulk. A detailed comparison and discussion on the characterization techniques used to assess the quality of both bulk and monolayer Nb3Cl8 are necessary.
2. In lines 53 to 56, the authors stated: “Then we further study its stability upon heating and organic solvent compatibility (acetone and isopropanol) for following fabrications. It reveals that heating could cause degradation of Nb3Cl8. Therefore, we avoid using any heating step for the whole fabrication process.”
- The methodology for these stability tests is not described. Please provide a detailed explanation of how the stability tests were conducted and any relevant data or results.
3. The manuscript should specify the number of devices fabricated with Si and ionic liquid gates. Additionally, information on the reproducibility of the experiments is crucial. Include statistical data or repeated trial results to demonstrate the consistency and reliability of the findings.
4. in the abstract, the authors mention, "Considering the reported optoelectronic performances and light absorption properties, our findings present new possibilities for future optoelectronic studies involving Nb3Cl8.”
- The abstract mentions potential applications in optoelectronics based on the reported optoelectronic performances and light absorption properties. However, the study does not include any investigation regarding the optical properties of Nb3Cl8. Please clarify how the findings of this work can be linked to future optoelectronic studies. If no optical properties were studied, consider revising the abstract to avoid misleading statements.
5. In line 13, the authors mentioned, "Nowadays, the study of two-dimensional (2D) material is a hot topic," which is broad and lacks contextualization and references. Specific context or examples and citations of relevant literature should be added to support this statement.
Comments on the Quality of English LanguageN/A
Author Response
Please see the attachment.
Author Response File: 
Author Response.pdf
Reviewer 2 Report
Comments and Suggestions for AuthorsThis manuscript proposed bipolar FET device based on few layered vdW TMH Nb3Cl8. Researchers investigated the device parameters such as ON/OFF ratio over thickness. Some new messages are presented in this manuscript which I believe worth to consider for the potential publication in Magnetochemistry provided that the fallowing comments should be considered:
1. The manuscript is full of grammar errors including correctness, clarity, engagement, and poor English. The authors should check the manuscript and address all of the errors including that kind of.
Authors should enrich the introduction section. It does not provide state-of-the-art. For instance, the possible advantages and the current challenges of the Nb3Cl8 over other materials for FET device applications.
2. Note that boron nitride based materials showed great potential for encapsulation and enhancement of life time of sensitive channel layers used in FET devices (https://doi.org/10.1021/acsami.2c18706, https://doi.org/10.1002/aelm.201800419, https://doi.org/10.1038/s41467-024-48429-4). Thus, discussing BN-based encapsulation for Nb3Cl8 device application mentioning referred articles in this section will be greatly informative.
3. For instance, recent progress in encapsulation materials such as h-BN and amorphous BN (a-BN) for Nb3Cl8 electronic devices should be mentioned/discussed. In this regard, the below references will enrich the introduction section:
https://doi.org/10.1021/acsami.2c18706
4. The description for figure 1 is not properly delivered.
5. What’s the thickness of single layer Nb3Cl8?
6. the colors in figure1c are not representing corresponding thickness and the number of layers (what is dark blue, cyan, pink and light pink for instance?).
7. The caption for figure one is not informative and description for each section should be properly addressed.
8. What is the relation between channel conductivity and thickness in figure 2b? this point is not properly demonstrated.
9. Also, the sweeping direction in figure2b for both forward and backward sweeps should be demonstrated by different line schemes.
10. Why hysteresis width varied by thickness in figure 2b?
11. The sweeping direction in figure4C for both forward and backward sweeps should be demonstrated by different line schemes.
12. Why hysteresis varies over Vds?
13. Since there is no comprehensive study on this manuscript I suggest authors to consider comparison table to compare key electrical parameters such as on//off ratio, mobility, channel thickness, saturation current, and threshold voltage, as well as subthreshold voltage swing (SS) with other different device categories, I suggest below papers for comparison:
https://doi.org/10.1021/acsami.2c18706
https://doi.org/10.1021/nl9039636
https://doi.org/10.1021/nn301572c
https://doi.org/10.1021/nl025875l
https://doi.org/10.1002/smll.200500181
https://doi.org/10.1002/cphc.202100261
https://doi.org/10.1021/nn401053g
https://doi.org/10.1021/acs.nanolett.5b01610
Comments on the Quality of English Language
1. The manuscript is full of grammar errors including correctness, clarity, engagement, and poor English. The authors should check the manuscript and address all of the errors including that kind of.
Author Response
Please see the attachment.
Author Response File: Author Response.pdf
Round 2
Reviewer 1 Report
Comments and Suggestions for AuthorsAnswers are satisfactory
