Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves

Huld, Frederik T.; Mæhlen, Jan Petter; Keller, Caroline; Lai, Samson Y.; Eleri, Obinna E.; Koposov, Alexey Y.; Yu, Zhixin; Lou, Fengliu

doi:10.3390/batteries9050251

Open AccessArticle

Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves

by

Frederik T. Huld

^1,2,*

,

Jan Petter Mæhlen

³,

Caroline Keller

^4,5

,

Samson Y. Lai

^2,3

,

Obinna E. Eleri

^1,2,

Alexey Y. Koposov

^3,6,*

,

Zhixin Yu

^2,*

and

Fengliu Lou

^1,*

¹

Beyonder, Stokkamyrveien 30, 4313 Sandnes, Norway

²

Department of Energy and Petroleum Engineering, University of Stavanger, Kjølv Egelands hus, Kristine Bonnevies vei, 4021 Stavanger, Norway

³

Department of Battery Technology, Institute for Energy Technology (IFE), Instituttveien 18, 2007 Kjeller, Norway

⁴

CEA, CNRS, IRIG, SYMMES, University Grenoble Alpes, 38000 Grenoble, France

⁵

CEA, LITEN, DEHT, University Grenoble Alpes, 38000 Grenoble, France

⁶

Center for Materials Science and Nanotechnology, Department of Chemistry, P.O. Box 1033, Blindern, 0371 Oslo, Norway

^*

Authors to whom correspondence should be addressed.

Batteries 2023, 9(5), 251; https://doi.org/10.3390/batteries9050251

Submission received: 26 February 2023 / Revised: 16 April 2023 / Accepted: 25 April 2023 / Published: 27 April 2023

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Abstract

The galvanostatic charge–discharge (GCD) behaviour of silicon (Si) is known to depend strongly on morphology, cycling conditions and electrochemical environment. One common method for analysing GCD curves is through differential capacity, but the data processing required necessarily degrades the results. Here we present a method of extracting empirical information from the delithiation step in GCD data for Si at C-rates above equilibrium conditions. We find that the function is able to quickly and accurately determine the best fit to historical half-cell data on amorphous Si nanowires and thin films, and analysis of the results reveals that the function is capable of distinguishing the capacity contributions from the Li

_{3.5}

Si and Li

_{2}

Si phases to the total capacity. The method can also pick up small differences in the phase behaviour of the different samples, making it a powerful technique for further analysis of Si data from the literature. The method was also used for predicting the size of the reservoir effect (the apparent amount of Li remaining in the electrode), making it a useful technique for quickly determining voltage slippage and related phenomena. This work is presented as a starting point for more in-depth empirical analysis of Si GCD data.

Keywords: silicon anodes; differential capacity; data analysis; thin films; nanowires; incremental capacity analysis

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MDPI and ACS Style

Huld, F.T.; Mæhlen, J.P.; Keller, C.; Lai, S.Y.; Eleri, O.E.; Koposov, A.Y.; Yu, Z.; Lou, F. Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves. Batteries 2023, 9, 251. https://doi.org/10.3390/batteries9050251

AMA Style

Huld FT, Mæhlen JP, Keller C, Lai SY, Eleri OE, Koposov AY, Yu Z, Lou F. Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves. Batteries. 2023; 9(5):251. https://doi.org/10.3390/batteries9050251

Chicago/Turabian Style

Huld, Frederik T., Jan Petter Mæhlen, Caroline Keller, Samson Y. Lai, Obinna E. Eleri, Alexey Y. Koposov, Zhixin Yu, and Fengliu Lou. 2023. "Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves" Batteries 9, no. 5: 251. https://doi.org/10.3390/batteries9050251

APA Style

Huld, F. T., Mæhlen, J. P., Keller, C., Lai, S. Y., Eleri, O. E., Koposov, A. Y., Yu, Z., & Lou, F. (2023). Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves. Batteries, 9(5), 251. https://doi.org/10.3390/batteries9050251

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Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves

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