Zhi, G.; Wang, K.; Zhang, H.; Ding, C.; Guo, S.; Gu, Y.; Fu, L.; Ning, F.L.
The Magnetic Properties of 1111-type Diluted Magnetic Semiconductor (La1−xBax)(Zn1−xMnx)AsO in the Low Doping Regime. Condens. Matter 2018, 3, 42.
https://doi.org/10.3390/condmat3040042
AMA Style
Zhi G, Wang K, Zhang H, Ding C, Guo S, Gu Y, Fu L, Ning FL.
The Magnetic Properties of 1111-type Diluted Magnetic Semiconductor (La1−xBax)(Zn1−xMnx)AsO in the Low Doping Regime. Condensed Matter. 2018; 3(4):42.
https://doi.org/10.3390/condmat3040042
Chicago/Turabian Style
Zhi, Guoxiang, Kai Wang, Haojie Zhang, Cui Ding, Shengli Guo, Yilun Gu, Licheng Fu, and F. L. Ning.
2018. "The Magnetic Properties of 1111-type Diluted Magnetic Semiconductor (La1−xBax)(Zn1−xMnx)AsO in the Low Doping Regime" Condensed Matter 3, no. 4: 42.
https://doi.org/10.3390/condmat3040042
APA Style
Zhi, G., Wang, K., Zhang, H., Ding, C., Guo, S., Gu, Y., Fu, L., & Ning, F. L.
(2018). The Magnetic Properties of 1111-type Diluted Magnetic Semiconductor (La1−xBax)(Zn1−xMnx)AsO in the Low Doping Regime. Condensed Matter, 3(4), 42.
https://doi.org/10.3390/condmat3040042