- Review
Review on Power Cycling Reliability of SiC Power Device
- Xu Gao,
- Qiang Jia,
- Yishu Wang,
- Hongqiang Zhang,
- Limin Ma,
- Guisheng Zou and
- Fu Guo
The rising demand for increased integration and higher power outputs poses a hidden risk to the long-term reliable operation of third-generation semiconductors. Thus, the power cycling test (PCT) is widely regarded as the utmost critical test for ass...

