Next Issue
Volume 5, September
Previous Issue
Volume 5, March
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
2.8
Journals
Electronic Materials
Volume 5
Issue 2
share announcement

Electron. Mater., Volume 5, Issue 2 (June 2024) – 4 articles

Cover Story (view full-size image): Printed electronics is a low-cost fabrication technique with a small environmental footprint that is suitable for large-scale applications. It can be carried out to design flexible hybrid electronic systems through the functionalization of inks using silver nanoparticles (AgNPs), which make them electrically conductive for the design of advanced circuits. AgNP-based inks are environmentally friendly due to the fact that they are composed of particles dispersed at high concentrations within non-pollutant reagents, such as water or hydrogen peroxide. This technique has been used to fabricate basic circuits via direct handwriting, thus demonstrating the relevance of incorporating AgNPs into liquid solutions for printing electronic components on wearable and flexible substrates. View this paper
  • Issues are regarded as officially published after their release is announced to the table of contents alert mailing list.
  • You may sign up for e-mail alerts to receive table of contents of newly released issues.
  • PDF is the official format for papers published in both, html and pdf forms. To view the papers in pdf format, click on the "PDF Full-text" link, and use the free Adobe Reader to open them.
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
21 pages, 9870 KiB  
Review
Review on Power Cycling Reliability of SiC Power Device
by Xu Gao, Qiang Jia, Yishu Wang, Hongqiang Zhang, Limin Ma, Guisheng Zou and Fu Guo
Electron. Mater. 2024, 5(2), 80-100; https://doi.org/10.3390/electronicmat5020007 - 10 Jun 2024
Viewed by 708
Abstract
The rising demand for increased integration and higher power outputs poses a hidden risk to the long-term reliable operation of third-generation semiconductors. Thus, the power cycling test (PCT) is widely regarded as the utmost critical test for assessing the packaging reliability of power [...] Read more.
The rising demand for increased integration and higher power outputs poses a hidden risk to the long-term reliable operation of third-generation semiconductors. Thus, the power cycling test (PCT) is widely regarded as the utmost critical test for assessing the packaging reliability of power devices. In this work, low-thermal-resistance packaging design structures of SiC devices are introduced, encompassing planar packaging with dual heat dissipation, press-pack packaging, three-dimensional (3D) packaging, and hybrid packaging. PCT methods and their control strategies are summarized and discussed. Direct-current PCT is the focus of this review. The failure mechanisms of SiC devices under PCT are pointed out. The electrical and temperature-sensitive parameters adopted to monitor the aging of SiC devices are organized. The existing international standards for PCT are evaluated. Due to the lack of authoritative statements for SiC devices, it is difficult to achieve comparison research results without consistent preconditions. Furthermore, the lifetimes of the various packaging designs of the tested SiC devices under PCTs are statistically analyzed. Additionally, problems related to parameter monitoring and test equipment are also summarized. This review explores the broader landscape by delving into the current challenges and main trends in PCTs for SiC devices. Full article
►▼ Show Figures

Figure 1

9 pages, 4960 KiB  
Article
The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode
by So-Yeon Kwon, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, Hi-Deok Lee and Ga-Won Lee
Electron. Mater. 2024, 5(2), 71-79; https://doi.org/10.3390/electronicmat5020006 - 6 Jun 2024
Viewed by 382
Abstract
In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varying oxygen affinities, are fabricated. X-ray [...] Read more.
In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varying oxygen affinities, are fabricated. X-ray diffraction (XRD) analysis shows that ZnO has a hexagonal wurtzite structure, and HfO2 exhibits both monoclinic and orthorhombic phases. The average grain sizes are 10.9 nm for ZnO and 1.55 nm for HfO2. In regards to the electrical characteristics, the I–V curve, cycling test, and voltage stress are measured. The measurement results indicate that devices with TiN/Ti TE exhibit lower set and higher reset voltage and stable bipolar switching behavior. However, a device with Pd TE demonstrates higher set and lower reset voltage. This phenomenon can be explained by the Gibbs free energy of formation (∆Gf°). Additionally, the Pd TE device shows unstable bipolar switching characteristics, where unipolar switching occurs simultaneously during the cycling test. This instability in devices with Pd TE could potentially lead to soft errors in operation. For guaranteeing stable bipolar switching, the oxygen affinity of material for TE should be considered in regards to ZnO/HfO2 bilayer RRAM. Full article
►▼ Show Figures

Figure 1

15 pages, 12235 KiB  
Article
Silver-Doped CsPbI2Br Perovskite Semiconductor Thin Films
by Tamiru Kebede, Mulualem Abebe, Dhakshnamoorthy Mani, Aparna Thankappan, Sabu Thomas and Jung Yong Kim
Electron. Mater. 2024, 5(2), 56-70; https://doi.org/10.3390/electronicmat5020005 - 13 May 2024
Viewed by 591
Abstract
All-inorganic perovskite semiconductors have received significant interest for their potential stability over heat and humidity. However, the typical CsPbI3 displays phase instability despite its desirable bandgap of ~1.73 eV. Herein, we studied the mixed halide perovskite CsPbI2Br by varying the [...] Read more.
All-inorganic perovskite semiconductors have received significant interest for their potential stability over heat and humidity. However, the typical CsPbI3 displays phase instability despite its desirable bandgap of ~1.73 eV. Herein, we studied the mixed halide perovskite CsPbI2Br by varying the silver doping concentration. For this purpose, we examined its bandgap tunability as a function of the silver doping by using density functional theory. Then, we studied the effect of silver on the structural and optical properties of CsPbI2Br. Resultantly, we found that ‘silver doping’ allowed for partial bandgap tunability from 1.91 eV to 2.05 eV, increasing the photoluminescence (PL) lifetime from 0.990 ns to 1.187 ns, and, finally, contributing to the structural stability when examining the aging effect via X-ray diffraction. Then, through the analysis of the intermolecular interactions based on the solubility parameter, we explain the solvent engineering process in relation to the solvent trapping phenomena in CsPbI2Br thin films. However, silver doping may induce a defect morphology (e.g., a pinhole) during the formation of the thin films. Full article
►▼ Show Figures

Figure 1

11 pages, 3141 KiB  
Article
Solution-Processable and Eco-Friendly Functionalization of Conductive Silver Nanoparticles Inks for Printable Electronics
by Sonia Ceron, David Barba and Miguel A. Dominguez
Electron. Mater. 2024, 5(2), 45-55; https://doi.org/10.3390/electronicmat5020004 - 16 Apr 2024
Cited by 1 | Viewed by 894
Abstract
The functionalization of conductive inks has been carried out through the decomposition of hydrogen peroxide (H2O2) onto the surface of silver nanoparticles (AgNPs). The ink prepared using this eco-friendly chemical reagent has been characterized structurally, chemically, and morphologically, showing [...] Read more.
The functionalization of conductive inks has been carried out through the decomposition of hydrogen peroxide (H2O2) onto the surface of silver nanoparticles (AgNPs). The ink prepared using this eco-friendly chemical reagent has been characterized structurally, chemically, and morphologically, showing the presence of stable AgNPs with suitable properties as well as the absence of residual contamination. The electrical conductivity of such a solution-processable ink is evidenced for patterns designed on flexible photographic paper substrates, using a refillable fountain pen that is implemented as a printing mechanism for the fabrication of simple printed circuit boards (PCBs). The functionality and durability of the tested systems are demonstrated under various mechanical constraints, aiming to basically reproduce the normal operation conditions of flexible electronic devices. The obtained results indicate that the implementation of these AgNP-based inks is relevant for direct applications in inkjet printing technology, thus paving the way for the use of greener chemicals in ink preparation. Full article
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-4
Previous Issue
Next Issue
Back to TopTop