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    Pressure-Induced YbFe2O4-Type to Spinel Structural Change of InGaMgO4
                        
            by
                    Takehiro Koike, Hena Das, Kengo Oka, Yoshihiro Kusano, Fernando Cubillas, Francisco Brown Bojorqez, Victor Emmanuel Alvarez-Montano, Shigekazu Ito, Kei Shigematsu, Hayato Togano, Ikuya Yamada, Hiroki Ishibashi, Yoshiki Kubota, Shigeo Mori, Noboru Kimizuka and Masaki Azuma        
    
                
        
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                    Abstract 
            
            
            Spinel-type InGaMgO
4 with 
a = 8.56615(3) Å was prepared by treating layered YbFe
2O
4-type InGaMgO
4 at 6 GPa and 1473 K. DFT calculation and Rietveld analysis of synchrotron X-ray powder diffraction data revealed the inverse spinel structure with
            
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            Spinel-type InGaMgO
4 with 
a = 8.56615(3) Å was prepared by treating layered YbFe
2O
4-type InGaMgO
4 at 6 GPa and 1473 K. DFT calculation and Rietveld analysis of synchrotron X-ray powder diffraction data revealed the inverse spinel structure with In
3+:Ga
3+/Mg
2+ = 0.726:0.274 in the tetrahedral site and 0.137:0.863 in the octahedral site. InGaMgO
4 spinel is an insulator with an experimental band gap of 2.80 eV, and the attempt at hole doping by post-annealing in a reducing atmosphere to introduce an oxygen defect was unsuccessful. This is the first report of the bulk synthesis of AB
2O
4 compounds with both YbFe
2O
4 and spinel polymorphs.
            
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