Recent Advances in Thin-Film Transistors: From Design to Application

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: 10 June 2026 | Viewed by 1141

Special Issue Editors

School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China
Interests: device physics; process and applications on thin-film transistors

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Guest Editor
Advanced Electronic Components and Systems, Hong Kong Applied Science and Technology Research Institute, Hong Kong, China
Interests: amorphous oxide; thin-film transistor; monolithic 3D

Special Issue Information

Dear Colleagues,

The emergence of thin-film transistors (TFTs) initially revolutionized display technology. Furthermore, their inherent advantages—particularly low-cost fabrication, tunable electrical characteristics, and excellent compatibility with various substrates—have now positioned them at the forefront of transformative applications, such as biomedical sensing platforms, wearable electronics, memory devices, and 3D integrated circuits. This evolution is driven by continuous innovation in device design, including the investigation of novel semiconductor materials (e.g., high-mobility metal oxides, stable organic compounds, and two-dimensional materials), the development of advanced device architectures (such as vertical transistors, heterostructures, and scaling-optimized configurations), and the refinement of theoretical models describing charge transport and interface phenomena. A key research objective, therefore, is to tailor these design elements—materials, structures, and theoretical frameworks—to satisfy the demanding and often distinctive performance requirements (e.g., speed, sensitivity, stability, and density) of a wide range of emerging applications. Conversely, an equally important strategy involves leveraging the intrinsic features of TFTs to enable entirely new application domains that were previously unattainable with conventional electronic technologies. This interplay between targeted design and application innovation constitutes the core of contemporary TFT research.

We are pleased to invite you to contribute original research articles and reviews in this Special Issue, titled "Recent Advances in Thin-Film Transistors: From Design to Application", which presents TFTs engineered to meet future challenges and addresses future applications made possible by current TFT technologies.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • Novel semiconductor materials (including metal oxides, silicon-based materials, 2D materials, organics, and perovskites), processes, and device architectures for high mobility, stability, and scalability.
  • Modeling and theoretical advances addressing charge transport, interfacial dynamics, and reliability.
  • TFT technologies for advanced display (including AMOLED, Ultra-high definition display, Head-up Display, and AR/VR).
  • Emerging applications (including biomedical diagnostics, neuromorphic computing, memory, and 3D IC) driven by TFT technology.

Dr. Huan Yang
Dr. Yuqing Zhang
Guest Editors

Manuscript Submission Information

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Keywords

  • thin-film transistors
  • application-tailored device design
  • thin-film coatings
  • advanced display
  • beyond-display applications

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Published Papers (2 papers)

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13 pages, 2255 KB  
Article
TCAD-Based Investigation of a-GaOx UV Phototransistors
by Yiting Cheng, Minghang Lei, Junyan Ren, Huize Tang, Yufang Xie, Chengfu Xu, Hongfei Wu, Yuting Xiong, Lingyan Liang and Hongtao Cao
Coatings 2026, 16(3), 308; https://doi.org/10.3390/coatings16030308 - 2 Mar 2026
Viewed by 370
Abstract
Amorphous gallium oxide thin-film transistor photodetectors are promising for ultraviolet detection because of their wide bandgap and low dark current. Magnetron sputtering is compatible with low-temperature processing, but device performance is sensitive to sputtering conditions. Poor parameter choices can introduce oxygen vacancies and [...] Read more.
Amorphous gallium oxide thin-film transistor photodetectors are promising for ultraviolet detection because of their wide bandgap and low dark current. Magnetron sputtering is compatible with low-temperature processing, but device performance is sensitive to sputtering conditions. Poor parameter choices can introduce oxygen vacancies and interface charges, degrading optoelectronic performance. Here, a three-factor, three-level orthogonal design is used to vary sputtering power, Ar/O2 flow ratio, and film thickness. Nine device sets are fabricated and compared based on transfer characteristics and transient photocurrent–time (I-t) responses measured at a wavelength of 254 nm, with clear differences observed among process combinations. To identify the origin of these differences, representative samples with significant responsivity variations were modeled using TCAD. By fitting the simulated I-t curves to measured transients, the interface fixed charge density and defect-state densities were extracted, and the photon absorption distribution of different samples was analyzed. This analysis, from both defect and UV absorption perspectives, revealed the reasons for the differences in responsivity. The absorption coefficients at 254 nm measured by ellipsometry for the two samples were also compared, and the absorption trends observed in both the simulation and ellipsometry were consistent, confirming the accuracy of the simulation results. This work presents an integrated experimental and TCAD approach for process optimization and mechanistic analysis of a-GaOx TFT-PDs. Full article
(This article belongs to the Special Issue Recent Advances in Thin-Film Transistors: From Design to Application)
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15 pages, 3735 KB  
Article
Enhanced Current Saturation in IGZO Thin Film Transistors Using a Source-Connected Bottom Gate Structure
by Jae-Hong Jeon
Coatings 2026, 16(2), 161; https://doi.org/10.3390/coatings16020161 - 27 Jan 2026
Viewed by 467
Abstract
Channel length modulation (CLM) in indium gallium zinc oxide (IGZO) thin film transistors (TFTs) reduces the output resistance (ro) in the saturation regime. It also degrades current driving accuracy for active matrix organic light emitting diode (AMOLED) backplanes. For top [...] Read more.
Channel length modulation (CLM) in indium gallium zinc oxide (IGZO) thin film transistors (TFTs) reduces the output resistance (ro) in the saturation regime. It also degrades current driving accuracy for active matrix organic light emitting diode (AMOLED) backplanes. For top gate, self-aligned devices with nominal channel lengths of 5–15 μm, transmission line method (TLM) analysis yields an effective channel length reduction (ΔL) of about 1.8 μm. This result is consistent with lateral hydrogen redistribution from the self-aligned source/drain (S/D) process. At L = 5 μm, the conventional TFT exhibits ro = 13.5 ± 2.5 MΩ and an Early voltage (VA) = 56.1 ± 10.4 V (n = 5). We propose a source connected bottom gate (SCBG) structure that electrostatically stabilizes the pinch-off region and suppresses CLM. The SCBG TFT increases ro to 475 ± 52 MΩ and VA to 1159 ± 173 V at L = 5 μm (n = 5), while maintaining normal transfer characteristics. Two-dimensional device simulations reproduce the trend and show that the drain-bias-induced pinch-off shift is reduced, with dL)/dVDS decreasing from 0.027 to 0.012 μm/V (about 55%). These results indicate that the SCBG approach is effective for enhancing current saturation in short channel IGZO TFTs for high-resolution AMOLED applications. Full article
(This article belongs to the Special Issue Recent Advances in Thin-Film Transistors: From Design to Application)
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