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Plasma Technology: Status and Challenges for Thin Film Deposition
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Plasma Technology: Status and Challenges for Thin Film Deposition

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Surface Characterization, Deposition and Modification".

Deadline for manuscript submissions: closed (30 October 2021) | Viewed by 11395

Special Issue Editors

Prof. Dr. Chang-Il Kim

E-Mail Website
Guest Editor
Chung-Ang University, Seoul, Korea
Interests: plasma deposition; plasma etching; sputtering; PECVD
Prof. Dr. Doo-Seung Um

E-Mail Website
Guest Editor
Sejong University, Seoul, Korea
Interests: plasma treatment; plasma doping; texturing; device application

Special Issue Information

Dear Colleagues,

Plasma technologies have been implemented in a very wide range applications ranging from semiconductor and display processes to nuclear fusion, bioscience, and environmental improvement techniques. In particular, plasma processes have been applied in a wide variety of applications such as thin film deposition, etching, surface treatment, and doping in the semiconductor and display industry. With the increasing integration density of semiconductor and display chips, continuous research on processing technology and the development of novel techniques are required. In this issue, we focus on “Plasma Technology: Status and Challenges for Thin Film Deposition”. This Special Issue will mainly cover plasma applications for semiconductor and display processes as well as plasma treatment techniques for device applications such as thin film deposition, etching, surface treatment, surface texturing, and doping. We also welcome reviews and perspective papers, including research papers on plasma process technology. The following specific topics will be covered in this Special Issue, and there are no limitations with respect to thin film technology by plasma technology.

  • Thin film processing by plasma technique
  • Plasma process for semiconducting and display devices
  • Plasma process for nanodevices
  • Plasma process for sensor applications
  • Functional or novel plasma process and equipment
  • Plasma monitoring and diagnostic technique
  • Plasma source
  • Plasma modeling and simulations

We encourage participation such that this Special Issue can become active and updated forum for plasma technology and serve as invaluable reference.

Prof. Dr. Chang-Il Kim
Prof. Dr. Doo-Seung Um
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • plasma technology
  • thin film deposition
  • etching
  • plasma treatments
  • surface texturing
  • plasma doping

Published Papers (2 papers)

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Research

26 pages, 5007 KiB  
Article
Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD—Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes
by Kenneth Scott Alexander Butcher, Vasil Georgiev and Dimka Georgieva
Coatings 2021, 11(12), 1506; https://doi.org/10.3390/coatings11121506 - 7 Dec 2021
Cited by 4 | Viewed by 4275
Abstract
Recent designs have allowed hollow cathode gas plasma sources to be adopted for use in plasma-enhanced atomic layer deposition with the benefit of lower oxygen contamination for non-oxide films (a brief review of this is provided). From a design perspective, the cathode metal [...] Read more.
Recent designs have allowed hollow cathode gas plasma sources to be adopted for use in plasma-enhanced atomic layer deposition with the benefit of lower oxygen contamination for non-oxide films (a brief review of this is provided). From a design perspective, the cathode metal is of particular interest since—for a given set of conditions—the metal work function should determine the density of electron emission that drives the hollow cathode effect. However, we found that relatively rapid surface modification of the metal cathodes in the first hour or more of operation has a stronger influence. Langmuir probe measurements and hollow cathode electrical characteristics were used to study nitrogen and oxygen plasma surface modification of aluminum and stainless-steel hollow cathodes. It was found that the nitridation and oxidation of these metal cathodes resulted in higher plasma densities, in some cases by more than an order of magnitude, and a wider range of pressure operation. Moreover, it was initially thought that the use of aluminum cathodes would not be practical for gas plasma applications, as aluminum is extremely soft and susceptible to sputtering; however, it was found that oxide and nitride modification of the surface could protect the cathodes from such problems, possibly making them viable. Full article
(This article belongs to the Special Issue Plasma Technology: Status and Challenges for Thin Film Deposition)
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10 pages, 2949 KiB  
Article
Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma
by Chea-Young Lee, Young-Hee Joo, Minsoo P. Kim, Doo-Seung Um and Chang-Il Kim
Coatings 2021, 11(8), 906; https://doi.org/10.3390/coatings11080906 - 29 Jul 2021
Cited by 11 | Viewed by 6005
Abstract
Plasma etching processes for multi-atomic oxide thin films have become increasingly important owing to the excellent material properties of such thin films, which can potentially be employed in next-generation displays. To fabricate high-performance and reproducible devices, the etching mechanism and surface properties must [...] Read more.
Plasma etching processes for multi-atomic oxide thin films have become increasingly important owing to the excellent material properties of such thin films, which can potentially be employed in next-generation displays. To fabricate high-performance and reproducible devices, the etching mechanism and surface properties must be understood. In this study, we investigated the etching characteristics and changes in the surface properties of InGaZnO4 (IGZO) thin films with the addition of O2 gases based on a CF4/Ar high-density-plasma system. A maximum etch rate of 32.7 nm/min for an IGZO thin film was achieved at an O2/CF4/Ar (=20:25:75 sccm) ratio. The etching mechanism was interpreted in detail through plasma analysis via optical emission spectroscopy and surface analysis via X-ray photoelectron microscopy. To determine the performance variation according to the alteration in the surface composition of the IGZO thin films, we investigated the changes in the work function, surface energy, and surface roughness through ultraviolet photoelectron spectroscopy, contact angle measurement, and atomic force microscopy, respectively. After the plasma etching process, the change in work function was up to 280 meV, the thin film surface became slightly hydrophilic, and the surface roughness slightly decreased. This work suggests that plasma etching causes various changes in thin-film surfaces, which affects device performance. Full article
(This article belongs to the Special Issue Plasma Technology: Status and Challenges for Thin Film Deposition)
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