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Crystals
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Semimagnetic Semiconductors/Diluted Magnetic Semiconductors
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Semimagnetic Semiconductors/Diluted Magnetic Semiconductors

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (15 October 2020) | Viewed by 5025

Special Issue Editors

Prof. Vasilii Zakhvalinskiǐ

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Guest Editor
Institute of Engineering and Digital Technology, Belgorod National Research University, 85 Pobedy St.,308015 Belgorod, Russia
Interests: obtaining and researching new electronics materials and searching for ways of their practical application
Prof. Dr. A. V. Kochura

E-Mail
Guest Editor
Deputy Director of the Regional Center for Nanotechnology SouthWest State University, 305040 Kursk, Russia

Special Issue Information

Dear Colleagues，

Semimagnetic semiconductors (SMSCs) or, alternatively, diluted magnetic semiconductors (DMSs) are semiconducting compounds in which a part of cations is replaced by transition metals or rare earth elements with partially filled d- and f-shells, respectively. Being disordered magnetic systems, DMSs demonstrate spin-glass phase transitions and the formation of antiferromagnetic and ferromagnetic clusters, which makes it possible to raise the temperature of the Curie point much higher than room temperature. DMSs exhibit photomagnetic and magneto-optical effects such as the Faraday rotation of the plane of polarization of light waves. Interesting features are observed in phenomena such as charge transfer, for example, anomalous dependence of the effective mass of the charge carrier on the magnetic field. A possible direction for using DMSs is spintronics, where it is supposed to use layers of DMSs in heterostructures as current injectors of polarized charge carriers. Composite materials based on them are often used to raise the temperature of the ferromagnetic phase transition. Following intensive research of topological insulators, Dirac and Weyl semimetals, DMSs with topological properties have been of particular interest among researchers. The combination of one material with properties of DMSs and a topological insulator creates the prerequisites which are used as new functional materials in electronics. As solid solutions, DMSs simultaneously allow the change of a wide band gap, the content of the magnetic component and, as a result, the temperature of the magnetic phase transitions, mobility, and concentration of charge carriers. The transport effect of Dirac fermions with zero cyclotron mass on the properties of DMSs is still poorly studied and of particular interest. The effect of reducing the dimensions of samples of DMSs on their properties deserves special attention. Recently, a lot of work has been devoted to the study of the properties of thin films of DMSs and heterostructures based on them. An important feature of DMSs is the ability to control the magnetic order through the carrier concentration, which easily changes the gate voltage in the metal–insulator–semiconductor heterostructure. There are various paths and first successes in practical applications of DMSs.

Prof. Vasilii Zakhvalinskiǐ
Prof. A. V. Kochura
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Diluted magnetic semiconductors
  • Semimagnetic semiconductors
  • Spintronics
  • Polarized charge carriers
  • Spin-glass
  • Ferromagnetic clusters
  • Thin films
  • Topological properties of DMSs

Published Papers (2 papers)

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Research

13 pages, 1944 KiB  
Article
Two-Dimensional Surface Topological Nanolayers and Dirac Fermions in Single Crystals of the Diluted Magnetic Semiconductor (Cd1−x−yZnxMny)3As2 (x + y = 0.3)
by Vasilii Zakhvalinskii, Tatyana Nikulicheva, Evgeny Pilyuk, Oleg Ivanov, Aleksey Kochura, Alexander Kuzmenko, Erkki Lähderanta and Alexander Morocho
Crystals 2020, 10(11), 988; https://doi.org/10.3390/cryst10110988 - 30 Oct 2020
Cited by 1 | Viewed by 1649
Abstract
Features in the transverse magnetoresistance of single-crystalline diluted magnetic semiconductors of a (Cd1−x−yZnxMny)3As2 system with x + y = 0.3 have been found and analyzed in detail. Two groups of samples [...] Read more.
Features in the transverse magnetoresistance of single-crystalline diluted magnetic semiconductors of a (Cd1−x−yZnxMny)3As2 system with x + y = 0.3 have been found and analyzed in detail. Two groups of samples have been examined. The samples of the first group were thermally annealed for a long time, whereas the samples of the second group were not thermally annealed. The Shubnikov–de Haas (SdH) oscillations were observed for both groups of the samples within a 4.2 ÷ 30 K temperature range and under transverse magnetic field sweeping from 0 up to 11 T. The value of a phase shift, according to the SdH oscillations, was found to be a characteristic of the Berry phase existing in all the samples, except the unannealed sample with y = 0.08. Thickness of 2D surface topological nanolayers for all the samples was estimated. The thickness substantially depended on Mn concentration. The experimental dependence of reduced cyclotron mass on the Fermi wave vector, extracted from the SdH oscillations for the samples with different doping levels, is in satisfactory agreement with the predicted theoretical linear dependence. The existence of the Dirac fermions in all the samples studied (except the unannealed sample with y = 0.08) can be concluded from this result. Full article
(This article belongs to the Special Issue Semimagnetic Semiconductors/Diluted Magnetic Semiconductors)
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13 pages, 989 KiB  
Article
Electronic Structure and High Magnetic Properties of (Cr, Co)-codoped 4H–SiC Studied by First-Principle Calculations
by Mengyu Zhang, Jingtao Huang, Xiao Liu, Long Lin and Hualong Tao
Crystals 2020, 10(8), 634; https://doi.org/10.3390/cryst10080634 - 23 Jul 2020
Cited by 6 | Viewed by 2889
Abstract
The electronic structure and magnetic properties of 3d transition metal (Cr, Co)-codoped 4H–SiC were studied by density functional theory within GGA methods. The results show that all doped magnetic atoms have high magnetic properties in both Cr-doped and Co-doped 4H–SiC, resulting in [...] Read more.
The electronic structure and magnetic properties of 3d transition metal (Cr, Co)-codoped 4H–SiC were studied by density functional theory within GGA methods. The results show that all doped magnetic atoms have high magnetic properties in both Cr-doped and Co-doped 4H–SiC, resulting in the net magnetic moments of 3.03, 3.02 μ B for Si 35 CrC 36 and Si 35 CoC 36 . The electronic density of states reaches the peak at Fermi level, which is beneficial to the electronic transitions, indicating that Cr-doped 4H–SiC is a semi-metallic material. In addition, the magnetic properties of (Cr, Co)-codoped 4H–SiC were also calculated. The results show that the (Cr, Co)-codoped 4H–SiC system has more stable ferromagnetic properties with ΔE F M of −244.3 meV, and we estimated T C of about 470.8 K for the (Cr, Co)-codoped 4H–SiC system. The (Cr, Co)-codoped 4H–SiC can be ferromagnetic through some mechanism based on hybridization between local Cr:3d, Co:3d and C:2p states. These interesting discoveries will help promote the use of excellent SiC-based nanomaterials in spintronics and multi-function nanodevices in the near future. Full article
(This article belongs to the Special Issue Semimagnetic Semiconductors/Diluted Magnetic Semiconductors)
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